Method for producing an optoelectronic component, optoelectronic component, and component arrangement having a plurality of optoelectronic components

• US 9,240,523 B2
• Filed: 04/03/2009
• Issued: 01/19/2016
• Est. Priority Date: 04/03/2009
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hppel, Lutz
• Primary Examiner(s): SHINGLETON, MICHAEL B
• Application Number:
  US13/262,678
• Publication Number:
  US 20120037930A1
• Time in Patent Office: 2,482 Days
• Field of Search: 257/79, 257/88, 257/103
• US Class Current: 1/1
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures, D) removing the separating structures, E) applying, a protective layer at least on lateral areas of copper layers, F) applying an auxiliary substrate on the copper layers, G) removing the growth substrate, H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.

Claims

1. An optoelectronic component comprising a semiconductor layer arranged on a copper layer, wherein

the copper layer is formed as a carrier substrate for the semiconductor layer,

an entire exposed surface of the copper layer having horizontal and lateral surfaces is coated with a metal layer, wherein the lateral areas of the copper layer are covered completely with the metal layer, and

only lateral portions of the metal layer covering the lateral areas of the copper layer are oxidized so that a protective layer is formed on the lateral areas of the copper layer, wherein the protective layer is a metal oxide layer which prevents copper migration into the semiconductor layer.

2. The component of claim 1, wherein the metal layer covering the horizontal area of the copper layer is not oxidized and is attached to a rear side contact layer.

3. The component of claim 1, wherein the copper layer is a plated layer applied onto a contact layer, and the contact layer acts as a seed layer and is arranged between the semiconductor layer and the copper layer.

4. The optoelectronic component according to claim 1, wherein the protective layer contains nickel.

5. The optoelectronic component according to claim 1, wherein the at least one semiconductor layer comprises an AlGaInP layer and/or an AlGaInAs layer.

6. The optoelectronic component according to claim 1, further comprising at least one contact layer arranged on one main side of the copper layer facing the semiconductor layer.

7. The optoelectronic component according to claim 6, wherein the contact layer comprises a solder selected from the group consisting of gold, palladium, platinum, tin, silver, nickel and alloys thereof.

8. The optoelectronic component according to claim 1, further comprising a mirror layer arranged on a side of the semiconductor layer which faces the copper layer.

9. The optoelectronic component according to claim 8, further comprising a diffusion barrier layer arranged on a side of the mirror layer which faces the copper layer.

10. The optoelectronic component according to claim 1, further comprising a rear side contact.

11. A component arrangement comprising a plurality of the optoelectronic components according to claim 1 arranged on a common carrier layer, wherein individual components are identical or different and at least one of the components has a semiconductor layer comprising an AlGaInP layer and/or an AlGaInAs layer.

12. The optoelectronic component according to claim 8, wherein the mirror layer is structured so that an injection of current is reduced or entirely prevented during operation of the component at structured locations of the mirror layer.

13. The optoelectronic component of claim 1, wherein the component is a thin-film semiconductor chip which is free of a growth substrate and the semiconductor layer sequence has a thickness of 20 μ

m or less.

14. The optoelectronic component of claim 1, further comprising a contact layer arranged between the copper layer and the semiconductor layer sequence and connected to the copper layer and a semiconductor layer of the semiconductor layer sequence, wherein the contact layer has a thickness of 1 nm to 100 nm.

15. The thin-film semiconductor chip according to claim 1, further comprising a rear side contact, wherein the copper layer is arranged between the rear side contact and the semiconductor layer sequence.

16. The thin-film semiconductor chip according to claim 1, further comprising a mirror layer arranged between the copper layer and the semiconductor layer sequence and structured so that an injection of current is reduced or entirely prevented during operation of the component at structured locations of the mirror layer.