Light emitter devices having improved chemical and physical resistance and related methods

• US 9,240,530 B2
• Filed: 04/11/2012
• Issued: 01/19/2016
• Est. Priority Date: 02/13/2012
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Reiherzer, Jesse Colin
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US13/444,394
• Publication Number:
  US 20130207142A1
• Time in Patent Office: 1,378 Days
• Field of Search: 438/27, 438/29, 438/116, 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

Light emitter devices having improved chemical and physical resistance and related methods are disclosed herein. In one embodiment, the light emitter device includes a light emission area with a cavity with one or more light emitting chips disposed within the cavity. The device can further include a filling material at least partially disposed over the one or more light emitting chips. The filling material can include a first discrete layer of phosphor containing material and a second discrete clear barrier layer. The clear barrier layer can include a layer of glass.

Claims

1. A light emitter device having improved chemical and physical resistance, the light emitter device comprising:

a light emission area and one or more light emitting chips associated with the light emission area; and

a filling material at least partially disposed over the one or more light emitting chips, wherein the filling material comprises;

a first discrete layer of phosphor containing material that comprises a silicone or epoxy material; and

a second discrete clear barrier layer; and

a third discrete layer of clear encapsulant;

wherein the clear barrier layer comprises a layer of glass, wherein the first discrete layer of phosphor containing material is thicker than the second discrete clear barrier layer, and wherein the second discrete clear barrier layer is disposed between the first discrete layer of phosphor containing material and the third discrete layer of clear encapsulant.

2. The device of claim 1, wherein the clear barrier layer comprises at least one of a silica containing glass, a fluoride containing glass, an aluminosilicate, a phosphate containing glass, a borate containing glass, a chalcogenide glass, a glass-ceramic material, an acrylic glass, a polycarbonate material, a polyethylene terephthalate material, a polymer glass, a soda lime glass, and a borosilicate glass.

3. The device of claim 1, wherein the clear barrier layer is at least partially disposed below an upper surface of the light emitter device.

4. The device of claim 1, wherein the clear barrier layer is entirely disposed below an upper surface of the light emitter device.

5. The device of claim 1, further comprising more than one discrete layer of phosphor containing material, and wherein the clear barrier layer is disposed between the more than one discrete layers of phosphor containing material.

6. The device of claim 1, wherein the clear barrier layer comprises a same length and width dimension and a same geometry as the first discrete layer of phosphor containing material.

7. The device of claim 1, wherein the first discrete layer of phosphor containing material is directly on at least a portion of the one or more light emitting chips.

8. The device of claim 1, wherein the third discrete layer of clear encapsulant is directly on at least a portion of the one or more light emitting chips.

9. The device of claim 1, wherein the first discrete layer of phosphor containing material is the same thickness as the third discrete layer of clear encapsulant.

10. The device of claim 1, wherein the device comprises a light output of approximately 1160 to 1190 lm at 270 mA.

11. The device of claim 1, wherein the light emission area is within a cavity.

12. The device of claim 11, wherein the cavity comprises one or more sidewalls adapted to retain the clear barrier layer.

13. The device of claim 12, further comprising a clear fillet disposed between portions of the clear barrier layer and at least one of the sidewalls of the cavity.

14. The device of claim 1, wherein the light emission area is within a cavity comprising one or more sidewalls with projection portions adapted to retain the clear barrier layer.

15. The device of claim 1 wherein the clear barrier layer has a thickness of approximately 0.1 mm or greater.

16. The device of claim 15 wherein the clear barrier layer has a thickness of approximately 0.6 mm or greater.

17. The device of claim 1 wherein the clear barrier layer has a thickness of approximately 0.6 mm or less.

18. The device of claim 15 wherein the light emitter device has a thickness of approximately 1.5 mm or greater.

19. The device of claim 18 wherein the light emitter device has a thickness of approximately 2.0 mm or greater.

20. The device of claim 15 wherein the light emitter device has a thickness of approximately 2.0 mm or less.

21. The device of claim 1 wherein a ratio of thickness of the clear barrier layer to thickness of the light emitter device is approximately 25% or greater.

22. The device of claim 1 wherein a ratio of thickness of the clear barrier layer to thickness of the light emitter device is approximately 30%.

23. The device of claim 15 wherein a ratio of thickness of the clear barrier layer to thickness of the light emitter device is approximately 25% or greater.

24. The device of claim 23 wherein a ratio of the thickness of the clear barrier layer to a thickness of the light emitter device is approximately 30%.

25. The device of claim 15 wherein a ratio of thickness of the clear barrier layer to thickness of the light emitter device is approximately 25% or less.

26. A light emitter device having improved chemical and physical resistance, the light emitter device comprising:

a light emission area and one or more light emitting chips associated with the light emission area; and

a filling material at least partially disposed over the one or more light emitting chips, wherein the filling material comprises;

a first discrete layer of phosphor containing material that comprises a silicone or epoxy material; and

a second discrete clear barrier layer;

wherein the clear barrier layer comprises a layer of glass that is substantially flat and substantially the same geometry as the first discrete layer of phosphor containing material, and wherein the first discrete layer of phosphor containing material is thicker than the second discrete clear barrier layer; and

a clear fillet disposed between portions of the clear barrier layer and a sidewall.

27. The device of claim 26, wherein the clear barrier layer comprises at least one of a silica containing glass, a fluoride containing glass, an aluminosilicate, a phosphate containing glass, a borate containing glass, a chalcogenide glass, a glass-ceramic material, an acrylic glass, a polycarbonate material, a polyethylene terephthalate material, a polymer glass, a soda lime glass, and a borosilicate glass.

28. The device of claim 26, wherein the filling material is filled to a level that is substantially flush with an upper surface of the light emitter device.

29. The device of claim 26, wherein the clear barrier layer is at least partially disposed below an upper surface of the light emitter device.

30. The device of claim 26, wherein the clear barrier layer is entirely disposed below an upper surface of the light emitter device.

31. The device of claim 26, wherein the clear barrier layer is disposed over the first discrete layer of phosphor containing material.

32. The device of claim 26, further comprising more than one discrete layer of phosphor containing material, and wherein the clear barrier layer is disposed between the more than one discrete layers of phosphor containing material.

33. The device of claim 26, wherein the clear barrier layer comprises a same length and width dimension as the first discrete layer of phosphor containing material.

34. The device of claim 26, further comprising a third discrete layer of clear encapsulant.

35. The device of claim 34, wherein the clear barrier layer is disposed between the first discrete layer of phosphor containing material and the third discrete layer of clear encapsulant.

36. The device of claim 34, wherein the first discrete layer of phosphor containing material is directly on a portion of the one or more light emitting chips.

37. The device of claim 34, wherein the third discrete layer of clear encapsulant is directly on a portion of the one or more light emitting chips.

38. The device of claim 34, wherein the first discrete layer of phosphor containing material is the same thickness as the third discrete layer of clear encapsulant.

39. The device of claim 26, wherein the device comprises a light output of approximately 1160 to 1190 lm at 270 mA.

40. The device of claim 26, comprising a cavity with one or more notched sidewalls adapted to retain the clear barrier layer.

41. The device of claim 40, wherein the cavity comprises one or more sidewalls with projecting portions adapted to retain the clear barrier layer.

42. A method of providing a light emitter device having improved chemical and physical resistance, the method comprising:

providing a light emission area and one or more light emitting chips associated with the light emission area; and

dispensing a first discrete layer of phosphor containing material and at least partially over the one or more light emitting chips, wherein the first discrete layer comprises a silicone or epoxy material;

arranging a clear barrier layer over the first discrete layer of phosphor containing material, wherein the clear barrier layer comprises a layer of glass that is substantially flat and substantially the same geometry as the first discrete layer of phosphor containing material, and wherein the first discrete layer of phosphor containing material is thicker than the second discrete clear barrier layer; and

dispensing at least one other discrete layer of phosphor containing material, wherein the clear barrier layer is arranged between the discrete layers of phosphor containing material.

43. The method of claim 42, wherein arranging the clear barrier layer comprises arranging at least one layer of a silica containing glass, a fluoride containing glass, an aluminosilicate, a phosphate containing glass, a borate containing glass, a chalcogenide glass, a glass-ceramic material, an acrylic glass, a polycarbonate material, a polyethylene terephthalate material, a polymer glass, a soda lime glass, and a borosilicate glass over the first discrete layer of phosphor containing material.

44. The method of claim 42, wherein arranging the clear barrier layer comprises arranging the clear barrier layer at least partially below an upper surface of the light emitter device.

45. The method of claim 42, wherein arranging the clear barrier layer comprises arranging the clear barrier layer entirely below an upper surface of the light emitter device.

46. The method of claim 42, further comprising sizing the clear barrier layer to the same length and width dimension as the first discrete layer of phosphor containing material.

47. The method of claim 42, further comprising dispensing a third discrete layer of clear encapsulant.

48. The method of claim 47, wherein the clear barrier layer is arranged between the first discrete layer of phosphor containing material and the third discrete layer of clear encapsulant.

49. The method of claim 47, wherein the first discrete layer of phosphor containing material is the same thickness as the third discrete layer of clear encapsulant.

50. The method of claim 42, wherein the filling material is filled to a level that is substantially flush with an upper surface of the light emitter device.

51. The method of claim 42, further comprising dispensing a clear fillet member between portions of the clear barrier layer and a sidewall.

52. The method of claim 42, further comprising notching one or more sidewalls for retaining the clear barrier layer.

53. The method of claim 42, further comprising providing one or more projecting portions extending from one or more sidewalls for retaining the clear barrier layer.

54. A light emitter device having improved chemical and physical resistance, the light emitter device comprising:

a light emission area and one or more light emitting chips associated with the light emission area; and

a filling material at least partially disposed over the one or more light emitting chips, wherein the filling material comprises;

a plurality of discrete layers of phosphor containing material; and

a discrete clear barrier layer;

wherein the clear barrier layer comprises a layer of glass, wherein the filling material is filled to a level that is substantially flush with an upper surface of the light emitter device, and wherein the clear barrier layer is disposed between the plurality of discrete layers of phosphor containing material.