Microchip with blocking apparatus

• US 9,242,856 B2
• Filed: 03/25/2014
• Issued: 01/26/2016
• Est. Priority Date: 11/09/2012
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Chen, Li, Nunan, Thomas Kieran, Yang, Kuang L.
• Primary Examiner(s): Sefer, A.
• Assistant Examiner(s): NGUYEN, DILINH P
• Application Number:
  US14/224,107
• Publication Number:
  US 20140203422A1
• Time in Patent Office: 672 Days
• Field of Search: 257/684, 257/686, 257/723, 257/724, 257/731, 257/782, 257/783, 257/786, 257/E25.031, 257/E25.032, 257/E23.042, 257/E25.006, 257/E25.013, 257/E25.018, 257/E25.021, 257/E25.027, 257/E21.614, 257/E23.085
• US Class Current: 1/1
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: B81C 3/001 Bonding of two components

Abstract

A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.

Claims

1. A microchip comprising:

a base die having a top surface with an exposed conductive interconnect, the base die also having an isolation trench around at least a portion of the conductive interconnect, the base die also having two opposed sides, the opposed sides comprising a first side and a second side, the conductive interconnect being positioned closer to the first side than it is to the second side;

a cap die secured to the base die;

a seal between the base die and the cap die, the seal securing the base die with the cap die, the seal comprising a metal material; and

a blocking trench formed in the base die between the isolation trench and the seal, the blocking trench being formed between the first side and the isolation trench, the blocking trench for at least in part preventing the metal material from electrically contacting the interconnect with the seal.

2. The microchip as defined by claim 1 wherein the base die comprises MEMS microstructure and the cap die comprises circuitry.

3. The microchip as defined by claim 1 wherein the blocking trench has a top opening and a cavity, the cavity having a larger inner dimension.

4. The microchip as defined by claim 3 wherein the top and trench has a lower portion and an upper portion, the upper portion being closer to the cap die than the lower portion, the lower portion and upper portion meeting to form an undercut, the lower portion having a first inner dimension, the upper portion having an second inner dimension, the first inner dimension being greater than the second inner dimension.

5. The microchip as defined by claim 1 wherein the metal material is an alloy comprising aluminum and germanium.

6. A microchip comprising:

a base die having a top surface with an exposed conductive interconnect, the base die also having an isolation trench around at least a portion of the conductive interconnect;

a cap die secured to the base die;

a seal between the base die and the cap die, the seal securing the base die with the cap die, the seal comprising a metal material; and

a protrusion extending downwardly from the cap die, the protrusion being spaced from and not contacting the base die, the protrusion being between the conductive interconnect and the seal, the protrusion at least in part preventing the metal material from electrically contacting the interconnect with the seal.

7. The microchip as defined by claim 6 wherein the protrusion is in electrical contact with the seal.

8. The microchip as defined by claim 6 wherein the base die includes MEMS microstructure.

9. The microchip as defined by claim 8 wherein the cap die comprises circuitry.

10. The microchip as defined by claim 6 wherein the metal material is an alloy comprising aluminum and germanium.

11. The microchip as defined by claim 6 wherein the protrusion forms a space between the protrusion and the base die.

12. The microchip as defined by claim 6 comprising a plurality of protrusions the extending downwardly from the cap die, the plurality of protrusions being spaced from and not contacting the base die.

13. The microchip as defined by claim 6 wherein the blocking protrusion comprises metal.

14. The microchip as defined by claim 6 wherein the cap die is substantially free of active circuitry.