Method of fabricating piezoelectric material with selected c-axis orientation
First Claim
1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising:
- providing a substrate;
initially flowing hydrogen over the substrate;
after the initially flowing of the hydrogen over the substrate,flowing the first component to form the piezoelectric material over a surface of a target comprising the second component;
sputtering the piezoelectric material from the target onto the substrate; and
flowing the hydrogen over the substrate during the sputtering at a rate sufficient to cause a piezoelectric film having a defined polarity to be formed over the substrate, whereina seed layer is not formed over the substrate prior to the sputtering.
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Abstract
In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.
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Citations
23 Claims
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1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising:
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providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the piezoelectric material over a surface of a target comprising the second component; sputtering the piezoelectric material from the target onto the substrate; and flowing the hydrogen over the substrate during the sputtering at a rate sufficient to cause a piezoelectric film having a defined polarity to be formed over the substrate, wherein a seed layer is not formed over the substrate prior to the sputtering. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a bulk acoustic wave (BAW) resonator having a piezoelectric material consisting essentially of first and second components, the method comprising:
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forming a first electrode over a substrate; forming a seed layer consisting essentially of the second component over the substrate; flowing the first component of the piezoelectric material to form the piezoelectric material over a surface of a target consisting essentially of the second component of the piezoelectric material; and sputtering the piezoelectric material from the target onto the seed layer to deposit a piezoelectric layer having a compression-negative (CN) polarity. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification