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Nanopore device wetting

  • US 9,244,039 B2
  • Filed: 07/25/2013
  • Issued: 01/26/2016
  • Est. Priority Date: 06/15/2012
  • Status: Expired due to Fees
First Claim
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1. A method for wetting a nanopore device, the method comprising:

  • filling a first cavity of the nanopore device with a first buffer solution having a first potential hydrogen (pH) value;

    filling a second cavity of the nanopore device with the first buffer solution having the first pH value, wherein the nanopore device includes a transistor portion having a first surface, an opposing second surface, and an orifice communicative with the first surface and the second surface, the first surface partially defining the first cavity, the second surface partially defining the second cavity;

    measuring a first current in the nanopore device in response to applying a first voltage in the nanopore device, the first current having a current path partially defined by the first cavity, the second cavity, and the orifice;

    flushing the first buffer solution having the first pH value from the second cavity and filling the second cavity with a second buffer solution having a second pH value of 1.9 to 2.1, wherein the second pH value is different from the first pH value; and

    measuring a second current in the nanopore device in response to applying a second voltage in the nanopore device.

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