Memory device including a SRAM memory plane and a non volatile memory plane, and operating methods
First Claim
Patent Images
1. A memory device comprising:
- an SRAM-type elementary memory cell having first and second inverter coupled to one another crosswise;
a first non-volatile memory unit having a first non-volatile elementary memory cell with a first floating-gate transistor, the first floating-gate transistor havinga first conduction electrode directly connected to a supply terminal,a control electrode coupled to a first control line, anda second conduction electrode;
a second non-volatile memory unit having a second non-volatile elementary memory cell with a second floating-gate transistor, the second floating-gate transistor havinga first conduction electrode directly connected to the supply terminal,a control electrode coupled to the first control line, anda second conduction electrode;
a controllable interconnection stage with a first portion coupled between the second conduction electrode of the first floating-gate transistor and an output of the first inverter and a second portion coupled between the second conduction electrode of the second floating-gate transistor and an output of the second inverter; and
a control circuit configured to cause the first and second floating-gate transistors to turn off when a data item stored in the SRAM-type elementary memory cell is differentially programmed into the first and second non-volatile memory units.
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Abstract
A memory device includes at least one memory cell having a first SRAM-type elementary memory cell having two inverters coupled to one another crosswise and two groups, each having at least one non-volatile elementary memory cell. The non-volatile elementary memory cells of the two groups are coupled firstly to a supply terminal and secondly to the outputs and to the inputs of the two inverters via a controllable interconnection stage.
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Citations
26 Claims
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1. A memory device comprising:
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an SRAM-type elementary memory cell having first and second inverter coupled to one another crosswise; a first non-volatile memory unit having a first non-volatile elementary memory cell with a first floating-gate transistor, the first floating-gate transistor having a first conduction electrode directly connected to a supply terminal, a control electrode coupled to a first control line, and a second conduction electrode; a second non-volatile memory unit having a second non-volatile elementary memory cell with a second floating-gate transistor, the second floating-gate transistor having a first conduction electrode directly connected to the supply terminal, a control electrode coupled to the first control line, and a second conduction electrode; a controllable interconnection stage with a first portion coupled between the second conduction electrode of the first floating-gate transistor and an output of the first inverter and a second portion coupled between the second conduction electrode of the second floating-gate transistor and an output of the second inverter; and a control circuit configured to cause the first and second floating-gate transistors to turn off when a data item stored in the SRAM-type elementary memory cell is differentially programmed into the first and second non-volatile memory units. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A memory device, comprising:
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a first SRAM-type elementary memory cell having two inverters coupled to one another crosswise; and two groups, each group having at least two parallel-coupled non-volatile elementary memory cells, the non-volatile elementary memory cells of the two groups being coupled firstly to a supply terminal and secondly to outputs and to inputs of the two inverters via a controllable interconnection stage, wherein each non-volatile elementary memory cell includes a floating-gate transistor, each floating-gate transistor of each non-volatile elementary memory cell including a first conduction electrode directly connected to the supply terminal, a second conduction electrode, and a control electrode coupled to a first control line. - View Dependent Claims (19, 20, 21)
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22. A method of operating a memory device that comprises:
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a first SRAM-type elementary memory cell having two inverters coupled to one another crosswise; two groups, each group having a non-volatile elementary memory cell, the non-volatile elementary memory cells of the two groups being coupled firstly to a supply terminal and secondly to outputs and to inputs of the two inverters via a controllable interconnection stage, wherein each non-volatile elementary memory cell includes a floating-gate transistor, all floating-gate transistors having a first conduction electrode coupled to the supply terminal and a control electrode coupled to a first control line; wherein the controllable interconnection stage comprises a second control line; a third control line; two first interconnection transistors respectively coupled between second conduction electrodes of the floating-gate transistors of the non-volatile elementary memory cells of the two groups and outputs of the two inverters of the SRAM-type elementary memory cell, and having a control electrode coupled to the second control line; and two second interconnection transistors respectively coupled between the second conduction electrodes of the floating-gate transistors of the non-volatile elementary memory cells of the two groups and inputs of the two inverters of the SRAM-type elementary memory cell, and having a control electrode coupled to the third control line; wherein the method comprises writing a data item stored in the SRAM-type elementary memory cell to the two groups of non-volatile elementary memory cells of the memory cell, the method comprising an erase cycle for the groups of non-volatile elementary memory cells followed by a differential programming cycle; wherein the erase cycle comprises; turning on the first interconnection transistors by applying a control voltage to the second control line; turning off the second interconnection transistors by applying a control voltage to the third control line; and wherein the differential programming cycle comprises; turning off the floating-gate transistor for each non-volatile elementary memory cell by applying a programming voltage to the first control line, wherein the floating-gate transistor for each non-volatile elementary memory cell is turned off during an entirety of the differential programming cycle; and
thenstopping application of the programming voltage to the first control line so as to put the at least one non-volatile elementary memory cell of one of the groups into a written state and the at least one non-volatile elementary memory cell of the other group into an erased state. - View Dependent Claims (23, 24, 25, 26)
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Specification