Method for manufacturing semiconductor device

• US 9,245,983 B2
• Filed: 06/17/2015
• Issued: 01/26/2016
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US14/741,547
• Publication Number:
  US 20150287813A1
• Time in Patent Office: 223 Days
• US Class Current: 1/1
• CPC Class Codes: G11C 16/0433 comprising cells containing a single floating gate transistor and one or more separate select transistors
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02323 introduction of oxygen
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/4757 After-treatment
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.

Claims

1. A method for manufacturing a semiconductor device, the method comprising:

forming a first insulating film over a single crystal semiconductor substrate;

forming an oxide semiconductor film over the first insulating film;

heating the oxide semiconductor film in an inert gas and then in a gas containing oxygen;

processing the heated oxide semiconductor film with a dry etching or a wet etching; and

heating the processed oxide semiconductor film in an inert gas.

2. The method according to claim 1, wherein the formation of the oxide semiconductor film is performed at a temperature equal to or higher than 200°

C. and equal to or lower than 400°

C.

3. The method according to claim 1, wherein the heating of the oxide semiconductor film before the processing is performed at a temperature equal to or higher than 250°

C. and equal to or lower than 650°

C.

4. The method according to claim 1, wherein the inert gas is a nitrogen gas.

5. The method according to claim 1, wherein the heating of the processed oxide semiconductor film is performed at a temperature equal to or higher than 200°

C. and equal to or lower than 400°

C.

6. The method according to claim 1, further comprising:

planarizing the first insulating film before forming the oxide semiconductor film.

7. The method according to claim 1, further comprising:

forming a gate insulating film over the oxide semiconductor film after heating the processed oxide semiconductor film; and

forming a gate electrode over the gate insulating film.

8. The method according to claim 7, further comprising:

performing heating after forming the gate electrode.

9. The method according to claim 1, wherein the heating of the oxide semiconductor film before the processing is performed so that oxygen is added to the oxide semiconductor film.

10. The method according to claim 1, wherein the heating of the processed oxide semiconductor film is performed so that oxygen is added to the oxide semiconductor film.

11. A method for manufacturing a semiconductor device, the method comprising:

forming a second transistor over a first transistor, the formation of the second transistor comprising;

forming a first insulating film over the first transistor;

forming an oxide semiconductor film over the first insulating film;

heating the oxide semiconductor film in an inert gas and then in a gas containing oxygen;

processing the heated oxide semiconductor film with a dry etching or a wet etching; and

heating the processed oxide semiconductor film in an inert gas,

wherein the first transistor comprises a channel formation region in a single crystal semiconductor substrate.

12. The method according to claim 11, wherein the formation of the oxide semiconductor film is performed at a temperature equal to or higher than 200°

C. and equal to or lower than 400°

C.

13. The method according to claim 11, wherein the heating of the oxide semiconductor film before the processing is performed at a temperature equal to or higher than 250°

C. and equal to or lower than 650°

C.

14. The method according to claim 11, wherein the inert gas is a nitrogen gas.

15. The method according to claim 11, wherein the heating of the processed oxide semiconductor film is performed at a temperature equal to or higher than 200°

C. and equal to or lower than 400°

C.

16. The method according to claim 11, further comprising:

planarizing the first insulating film before forming the oxide semiconductor film.

17. The method according to claim 11, further comprising:

forming a gate insulating film over the oxide semiconductor film after heating the processed oxide semiconductor film; and

forming a gate electrode over the gate insulating film.

18. The method according to claim 17, further comprising:

performing heating after forming the gate electrode.

19. The method according to claim 11, wherein the heating of the oxide semiconductor film before the processing is performed so that oxygen is added to the oxide semiconductor film.

20. The method according to claim 11, wherein the heating of the processed oxide semiconductor film is performed so that oxygen is added to the oxide semiconductor film.