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Power semiconductor device and method of manufacturing the same

  • US 9,245,986 B2
  • Filed: 07/02/2014
  • Issued: 01/26/2016
  • Est. Priority Date: 11/29/2012
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer;

    a second conductive type semiconductor substrate disposed on the other surface of the base substrate;

    a second conductive type well layer disposed under the one surface of the base substrate;

    a first conductive type diffusion layer disposed in the base substrate, formed to be spaced apart from the well layer in a first direction, and having an impurity concentration higher than that of the drift layer;

    a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in the first direction;

    an insulation film disposed on the one surface of the base substrate including an inner wall of the trench; and

    a first electrode disposed in the trench,wherein a peak point of an impurity doping concentration of the diffusion layer in a second direction perpendicular to the first direction is positioned in a region contacting a side surface of the trench.

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