Oxide thin film transistor and method for manufacturing the same, array substrate, and display apparatus

• US 9,246,007 B2
• Filed: 10/09/2012
• Issued: 01/26/2016
• Est. Priority Date: 03/21/2012
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Cheng, Jun, Lee, Woobong
• Primary Examiner(s): Lee, Jae
• Assistant Examiner(s): Alam, Mohammed R
• Application Number:
  US13/994,746
• Publication Number:
  US 20140110702A1
• Time in Patent Office: 1,204 Days
• Field of Search: 257/43, 257/223, 257/227, 257/291, 257/292, 257/439, 257/443, 257/655, 257/E27.1, 257/E27.125, 257/E27.112, 257/E29.117, 257/E29.145, 257/E29.147, 257/E29.151, 257/E29.182, 257/E29.202, 257E29273-E29299, 257/E29.314, 257/E29.32, 257/E23.016
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).

Claims

1. A method for fabricating an oxide thin film transistor (oxide-TFT) comprising:

forming a gate electrode layer on a substrate, and forming a pattern comprising a gate electrode and a gate line by a patterning process;

forming a gate insulating layer and an active layer;

forming a first blocking layer and a second blocking layer, wherein the first blocking layer is a silicon compound, a ratio of an amount of hydrogen-containing chemical bonds to a total amount of chemical bonds in the silicon compound is 0.1%˜

5%, the second blocking layer is SiOx, in which x is 0.1<

x<

1, or the second blocking layer is SiNx, wherein x is 1<

x<

1.33; and

forming a source/drain metal layer, and forming a pattern comprising source/drain electrodes and a channel region of the TFT by a patterning process;

wherein the second blocking layer is SiOx, which is prepared under following conditions;

a reactive atmosphere is SiH₄+N₂O+N₂, a flow ratio of SiH₄/N₂O is 1/10˜

1/30, a temperature is 150˜

350°

C., and a pressure is 1500 mtorr˜

2500 mtorr;

or

the second blocking layer is SiOx, which is prepared under following conditions;

a reactive atmosphere is SiH₄+O₂+N₂, a flow ratio of SiH₄/O₂ is 1˜

3, a temperature is 150˜

350°

C., and a pressure is 1500 mtorr˜

2500 mtorr;

or

the second blocking layer is SiNx, which is prepared under following conditions;

a reactive atmosphere is SiH₄+NH₃+N₂ or SiH₄+NH₃+H₂, a flow ratio of SiH₄/NH₃ is 1/8˜

1/10, a temperature is 250˜

400°

C., and a pressure is 1200 mtorr˜

2500 mtorr.

2. The method according to claim 1, wherein the first blocking layer is silicon oxide, content of hydrogen of which is 0.1%˜

5%.

3. The method according to claim 2, wherein the first blocking layer is prepared under following conditions:

a reactive atmosphere is SiH₄+N₂O+N₂, a flow ratio of SiH₄/N₂O is 1/40˜

1/60, a temperature is 150˜

350°

C., and a pressure is 1000 mtorr˜

2000 mtorr.

4. The method according to claim 2, wherein the first blocking layer is prepared under following conditions:

a reactive atmosphere is SiH₄+O₂+N₂, a flow ratio of SiH₄/O₂ is 0.2˜

1, a temperature is 150˜

350°

C., and a pressure is 1000 mtorr˜

2000 mtorr.

5. The method according to claim 1, wherein the first blocking layer is silicon nitride, content of hydrogen of which is 0.1%˜

5%.