Silicon carbide semiconductor device
First Claim
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1. A silicon carbide (SiC) semiconductor device, comprising:
- a substrate, having heavily doped n-type;
an n-drift layer, disposed on the substrate, having lightly doped n-type compared to the substrate;
a plurality of doped regions, disposed at the n-drift layer, spaced from each other and formed a junction field effect transistor (JFET) region therebetween, each of the doped regions comprising a p-well, a heavily doped n-type (n+) region located in the p-well, and a heavily doped p-type (p+) region located in the p-well and surrounded by the n+ region;
a gate dielectric layer, disposed on the n-drift layer;
a gate electrode, disposed on the gate dielectric layer;
an inter-layer dielectric layer, disposed on the gate dielectric layer and the gate electrode;
a plurality of source openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the n+ region and the p+ region and are separated by the gate electrode and the inter-layer dielectric layer;
a plurality of junction openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the JFET region and the doped regions are separated by the gate electrode and the inter-layer dielectric layer;
a plurality of gate openings, penetrating through the inter-layer dielectric layer to a surface portion of the gate electrode;
a first metal layer, disposed at a bottom of the source openings, formed an Ohmic contact with the surface portion of the n+ region and the p+ region; and
a second metal layer, comprising a first portion and a second portion wherein the first portion covers the source openings and the junction openings is electrically connected to the first metal layer and forms a Schottky contact with the surface portion the JFET region;
the second portion covers the gate openings and is electrically insulated from the first portion.
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Abstract
A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: a substrate, an n-drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode.
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Citations
15 Claims
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1. A silicon carbide (SiC) semiconductor device, comprising:
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a substrate, having heavily doped n-type; an n-drift layer, disposed on the substrate, having lightly doped n-type compared to the substrate; a plurality of doped regions, disposed at the n-drift layer, spaced from each other and formed a junction field effect transistor (JFET) region therebetween, each of the doped regions comprising a p-well, a heavily doped n-type (n+) region located in the p-well, and a heavily doped p-type (p+) region located in the p-well and surrounded by the n+ region; a gate dielectric layer, disposed on the n-drift layer; a gate electrode, disposed on the gate dielectric layer; an inter-layer dielectric layer, disposed on the gate dielectric layer and the gate electrode; a plurality of source openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the n+ region and the p+ region and are separated by the gate electrode and the inter-layer dielectric layer; a plurality of junction openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the JFET region and the doped regions are separated by the gate electrode and the inter-layer dielectric layer; a plurality of gate openings, penetrating through the inter-layer dielectric layer to a surface portion of the gate electrode; a first metal layer, disposed at a bottom of the source openings, formed an Ohmic contact with the surface portion of the n+ region and the p+ region; and a second metal layer, comprising a first portion and a second portion wherein the first portion covers the source openings and the junction openings is electrically connected to the first metal layer and forms a Schottky contact with the surface portion the JFET region;
the second portion covers the gate openings and is electrically insulated from the first portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A silicon carbide (SiC) semiconductor device, comprising:
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a substrate, having heavily doped n-type; a n-drift layer, disposed on the substrate, having lightly doped n-type compared to the substrate; a plurality of first doped regions, disposed at the n-drift layer, each of the first doped regions comprising a first p-well, a first n+ region arranged in the first p-well, and a first p+ region arranged in the first p-well and surrounded by the first n+ region; a plurality of second doped regions, disposed at the n-drift layer and spaced from the first doped regions to form a JFET region between the first doped region and the second doped region, each of the second doped regions comprising a second p-well surrounding a non-p-well region, and a second p+ region surrounding the non-p-well region and a part or all of the p+ region overlaps with the second p-well; a gate dielectric layer, disposed on the n-drift layer; a gate electrode, disposed on the gate dielectric layer; an inter-layer dielectric layer, disposed on the gate dielectric layer and the gate electrode; a plurality of source openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the first n+ region and the first p+ region, and are separated by the gate electrode and the inter-layer dielectric layer; a plurality of junction openings, penetrating through the inter-layer dielectric layer and the gate dielectric layer to a surface portion of the second doped region, and are separated by the gate electrode and the inter-layer dielectric layer; a plurality of gate openings, penetrating through the inter-layer dielectric layer to a surface portion of the gate electrode; a first metal layer, disposed at a bottom of the source openings, formed an Ohmic contact with the surface portion of the first n+ region and the first p+ region; and a second metal layer, comprising a first portion and a second portion wherein the first portion covers the source openings and the junction openings and is electrically connected to the first metal layer and forms a Schottky contact with a surface portion of the non-p-well region, the second portion covers the gate openings and is electrically insulated from the first portion. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification