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Semiconductor device

  • US 9,246,047 B2
  • Filed: 08/06/2013
  • Issued: 01/26/2016
  • Est. Priority Date: 08/10/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    a gate electrode over and in contact with an insulating surface;

    an insulating layer over the gate electrode; and

    a semiconductor layer including a channel formation region over and in contact with the insulating layer, the semiconductor layer containing oxygen, indium, zinc and a metal other than indium and zinc; and

    a capacitor comprising;

    a first conductive layer over and in contact with the insulating surface;

    the insulating layer over the first conductive layer; and

    a second conductive layer over and in contact with the insulating layer, the second conductive layer containing oxygen, indium, zinc and the metal,wherein each of the semiconductor layer, the first conductive layer, the insulating layer and the second conductive layer is capable of transmitting light, andwherein the second conductive layer includes a region having a higher conductivity than the channel formation region of the semiconductor layer.

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