Light emitting device having light extraction structure and method for manufacturing the same
First Claim
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1. A light emitting device package, comprising:
- a light emitting device;
a body comprising;
a top surface on which the light emitting device is disposed;
a bottom surface, a center of the bottom surface downwardly protruding to form a recess at a side of the bottom surface; and
a side surface disposed between the top surface and the bottom surface; and
a lead disposed on the top, side, and bottom surfaces of the body, an end of the lead being disposed on the recess of the body,wherein a portion of the lead is separated from the side surface of the body to form a gap therebetween, andwherein the light emitting device comprises;
a semiconductor layer comprising a light emitting layer;
a light extracting structure arranged on the semiconductor layer; and
a reflective electrode disposed under the semiconductor layer, andwherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ
/(4n)±
α
, wherein “
λ
”
represents a wavelength of light emitted from the light emitting layer, “
n”
represents a refractive index of the semiconductor layer, and “
α
”
represents 0.14 λ
/n.
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
119 Citations
16 Claims
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1. A light emitting device package, comprising:
-
a light emitting device; a body comprising; a top surface on which the light emitting device is disposed; a bottom surface, a center of the bottom surface downwardly protruding to form a recess at a side of the bottom surface; and a side surface disposed between the top surface and the bottom surface; and a lead disposed on the top, side, and bottom surfaces of the body, an end of the lead being disposed on the recess of the body, wherein a portion of the lead is separated from the side surface of the body to form a gap therebetween, and wherein the light emitting device comprises; a semiconductor layer comprising a light emitting layer; a light extracting structure arranged on the semiconductor layer; and a reflective electrode disposed under the semiconductor layer, and wherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ
/(4n)±
α
, wherein “
λ
”
represents a wavelength of light emitted from the light emitting layer, “
n”
represents a refractive index of the semiconductor layer, and “
α
”
represents 0.14 λ
/n. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification