Diamond sensors, detectors, and quantum devices
First Claim
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1. A synthetic single crystal diamond material comprising:
- a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects;
a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and
a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region,wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, andwherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μ
m which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.
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Abstract
A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.
53 Citations
14 Claims
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1. A synthetic single crystal diamond material comprising:
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a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μ
m which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Current AssigneeElement Six (Holdings) Ltd. (Anglo American PLC)
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Original AssigneeElement Six (Holdings) Ltd. (Anglo American PLC)
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InventorsTwitchen, Daniel James, Markham, Matthew Lee, Scarsbrook, Geoffrey Alan
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Primary Examiner(s)Sample, David
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Assistant Examiner(s)Flores, Jr., Donald M
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Application NumberUS14/111,550Publication NumberTime in Patent Office1,372 DaysField of SearchNoneUS Class Current1/1CPC Class CodesC30B 25/02 Epitaxial-layer growthC30B 29/04 DiamondC30B 31/22 by ion-implantationC30B 33/00 After-treatment of single c...G06N 10/00 Quantum computing, i.e. inf...
