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Early detection of overheating devices

  • US 9,250,667 B2
  • Filed: 10/01/2013
  • Issued: 02/02/2016
  • Est. Priority Date: 04/16/2012
  • Status: Active Grant
First Claim
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1. A method comprising:

  • monitoring, using a sensor with a sensing material, an odor within a physical enclosure of a computing device comprising one or more components, the sensor comprising a metal oxide semiconductor field effect transistor (“

    MOSFET”

    ), the MOSFET acting as a transducer that represents the odor as an electrical signal, wherein the sensing material comprises a gate of the MOSFET and odor molecules interact with gate material of the MOSFET to alter a threshold voltage of the MOSFET;

    determining, using an artificial neural network, that the odor within the physical enclosure is indicative of an overheating component that is overheating within the physical enclosure of the computing device, wherein the artificial neural network determines that the odor is indicative of an overheating component by comparing an alteration in the sensing material with a reference database comprising a plurality of reference alterations caused by the overheating component, each reference alteration comprising an electrical signal that corresponds with an odor, wherein determining that the odor within the physical enclosure is indicative of the overheating component comprises determining that the alteration corresponds to one or more of the reference alterations in the reference database; and

    initiating an overheating protocol in response to determining that the odor within the physical enclosure is indicative of the overheating component.

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