Bias temperature instability state detection and correction
First Claim
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1. A memory device comprising:
- a set of memory circuits configured to store data by selectively being operated in one of the two following states;
idle state and active state;
a timing control module configured to selectively control the operational state of the set of memory circuits, with the timing control module including a root combinational logic location; and
an age-detect-and-correct (ADAC) circuit, connected across the root combinational logic location and including a first set of transistor(s) and a second set of transistor(s), the ADAC circuit being configured to control the timing control module to arbitrate between the idle state and the active state based upon a difference in bias temperature instability fatigue as between the first set of transistor(s) and the second set of transistor(s).
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Abstract
A memory device with an age-detect-and-correct (ADAC) circuit that detects skew caused by bias temperature instability fatigue (that is, bias temperature instability stress accumulated over time), and counters skew by selectively adjusting the proportion (measured temporally) of active state operation to idle state operation. Also, a memory burn-in device using a similar ADAC circuit.
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Citations
20 Claims
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1. A memory device comprising:
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a set of memory circuits configured to store data by selectively being operated in one of the two following states;
idle state and active state;a timing control module configured to selectively control the operational state of the set of memory circuits, with the timing control module including a root combinational logic location; and an age-detect-and-correct (ADAC) circuit, connected across the root combinational logic location and including a first set of transistor(s) and a second set of transistor(s), the ADAC circuit being configured to control the timing control module to arbitrate between the idle state and the active state based upon a difference in bias temperature instability fatigue as between the first set of transistor(s) and the second set of transistor(s). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A memory burn-in device comprising:
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a set of memory circuits configured to store data by selectively being operated in one of the two following states;
idle state and active state;a timing control module configured to selectively control the operational state of the set of memory circuits during burn-in, with the timing control module including a root combinational logic location; and a skew detect circuit, connected across the root combinational logic location and including a first set of transistor(s) and a second set of transistor(s), the skew detect circuit being configured to control the timing control module to arbitrate between the idle state and the active state, during burn-in, based upon a difference in bias temperature instability fatigue as between the first set of transistor(s) set and the second set of transistor(s). - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method comprising:
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starting to perform burn-in operations using a memory burn-in device that includes a set of memory circuits and a skew detection circuit, with the memory burn-in operations including an idle state and an active state; detecting, by the skew detection circuit, which of the following two alternatives are applicable;
(i) idle state needs to be skewed, or (ii) active state needs to be skewed;on condition that idle state needs to be skewed, then continuing burn-in operation without adjustment to an internal clock; and on condition that active state needs to be skewed, adjusting a pulse width of an internal clock to increase the amount of time that the memory circuits are in an active state. - View Dependent Claims (20)
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Specification