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Semiconductor device and method for producing semiconductor device

  • US 9,252,190 B2
  • Filed: 09/10/2014
  • Issued: 02/02/2016
  • Est. Priority Date: 11/13/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first pillar-shaped semiconductor layer;

    a gate insulating film around the first pillar-shaped semiconductor layer;

    a gate electrode made of a metal around the gate insulating film;

    a gate line made of a metal and connected to the gate electrode;

    a second gate insulating film around an upper portion of the first pillar-shaped semiconductor layer;

    a first contact made of a second metal and around the second gate insulating film;

    a second contact made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer;

    a diffusion layer in a lower portion of the first pillar-shaped semiconductor layer;

    a pillar-shaped resistance-changing layer on the second contact;

    a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and

    a reset gate that surrounds the reset gate insulating film.

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