Semiconductor component with a space saving edge structure
First Claim
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1. A semiconductor component comprising:
- a semiconductor body comprising a first side and a second side, and a first semiconductor layer having a basic doping of a first conductivity type;
at least one active component zone of a second conductivity type, which is complementary to the first conductivity type, in the first semiconductor layer;
a cell array with a plurality of trenches, each trench including a field electrode and a field electrode dielectric, wherein in the cell array the at least one active component zone of the second conductivity type is electrically connected to an electrode, the cell array including an edge region, wherein the edge region of the cell array includes at least an outermost trench of the cell array and a trench of the cell array adjacent to the outermost trench; and
at least one cell array edge zone of the second conductivity type, the at least one cell array edge zone arranged only in the edge region of the cell array at least partially below and having an interface with at least one trench in the edge region of the cell array, wherein the cell array edge zone is spaced apart from the first side of the semiconductor body,wherein the semiconductor component is implemented as a MOS transistor and comprising in the inner region a plurality of transistor cells, each transistor cell comprising;
a source zone of a first conductivity type, a drift zone of the first conductivity type, and a body zone of the second conductivity type between the source zone and the drift zone;
a gate electrode being disposed adjacent to the body zone and being insulated against the body zone by a gate dielectric, and wherein the gate electrodes of the transistor cells are arranged in the same trenches as the field electrodes, the field electrodes extending deeper into the semiconductor body than the gate electrodes.
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Abstract
A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. The cell array edge zone is only arranged in an edge region of the cell array, adjoining at least one trench of the cell array, and being at least partially arranged below the at least one trench in the cell array.
27 Citations
23 Claims
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1. A semiconductor component comprising:
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a semiconductor body comprising a first side and a second side, and a first semiconductor layer having a basic doping of a first conductivity type; at least one active component zone of a second conductivity type, which is complementary to the first conductivity type, in the first semiconductor layer; a cell array with a plurality of trenches, each trench including a field electrode and a field electrode dielectric, wherein in the cell array the at least one active component zone of the second conductivity type is electrically connected to an electrode, the cell array including an edge region, wherein the edge region of the cell array includes at least an outermost trench of the cell array and a trench of the cell array adjacent to the outermost trench; and at least one cell array edge zone of the second conductivity type, the at least one cell array edge zone arranged only in the edge region of the cell array at least partially below and having an interface with at least one trench in the edge region of the cell array, wherein the cell array edge zone is spaced apart from the first side of the semiconductor body, wherein the semiconductor component is implemented as a MOS transistor and comprising in the inner region a plurality of transistor cells, each transistor cell comprising;
a source zone of a first conductivity type, a drift zone of the first conductivity type, and a body zone of the second conductivity type between the source zone and the drift zone;
a gate electrode being disposed adjacent to the body zone and being insulated against the body zone by a gate dielectric, and wherein the gate electrodes of the transistor cells are arranged in the same trenches as the field electrodes, the field electrodes extending deeper into the semiconductor body than the gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor component comprising:
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a semiconductor body comprising a first side and a second side, and a first semiconductor layer having a basic doping of a first conductivity type; at least one active component zone of a second conductivity type, which is complementary to the first conductivity type, in the first semiconductor layer; a cell array with a plurality of trenches, each trench including a field electrode and a field electrode dielectric, wherein in the cell array the at least one active component zone of the second conductivity type is electrically connected to an electrode, the cell array including an edge region, wherein the edge region of the cell array includes at least an outermost trench of the cell array and a trench of the cell array adjacent to the outermost trench; and at least one cell array edge zone of the second conductivity type, the at least one cell array edge zone arranged only in the edge region of the cell array at least partially below and having an interface with at least one trench in the edge region of the cell array, wherein the cell array edge zone is spaced apart from the first side of the semiconductor body, wherein the semiconductor layer comprises a first partial layer and a second partial layer below the first partial layer and having a lower doping concentration than the first partial layer. - View Dependent Claims (23)
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Specification