Shielded gate trench MOS with improved source pickup layout
First Claim
1. A semiconductor device comprising:
- a semiconductor layer;
a plurality of trenches formed in the semiconductor layer, the plurality of trenches include active gate trenches located in a first active area and a second active area, gate runner/termination trenches and a source pickup trench located in a termination area between the first and second active areas, wherein a first conductive region is located at a bottom portion of the active gate, gate runner/termination and source pickup trenches and a second conductive region is located at a top portion of the active gate and gate runner/termination trenches, and wherein the first and second conductive regions are separated by an intermediate dielectric region in the active gate and gate runner/termination trenches; and
a source metal extending from the first active area through the termination area to the second active area, wherein the source metal is connected through a source contact to the first conductive region of the source pickup trench located in the termination area between the first and second active areas.
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Accused Products
Abstract
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a semiconductor layer; a plurality of trenches formed in the semiconductor layer, the plurality of trenches include active gate trenches located in a first active area and a second active area, gate runner/termination trenches and a source pickup trench located in a termination area between the first and second active areas, wherein a first conductive region is located at a bottom portion of the active gate, gate runner/termination and source pickup trenches and a second conductive region is located at a top portion of the active gate and gate runner/termination trenches, and wherein the first and second conductive regions are separated by an intermediate dielectric region in the active gate and gate runner/termination trenches; and a source metal extending from the first active area through the termination area to the second active area, wherein the source metal is connected through a source contact to the first conductive region of the source pickup trench located in the termination area between the first and second active areas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor layer; a plurality of trenches formed in the semiconductor layer, the plurality of trenches include active gate trenches located in an active area, gate runner/termination trenches and source pickup trench located in a first termination area and gate runner/termination trench and gate pickup trenches located in a second termination area separated from the first termination area by the active area wherein a first conductive region is located at a bottom portion of the active gate, gate runner/termination, gate pickup and source pickup trenches and a second conductive region is located at a top portion of the active gate, gate pickup and gate runner/termination trenches, and wherein the first and second conductive regions are separated by an intermediate dielectric region; a gate pickup contact connected to the second conductive regions of the gate pick up trenches located in the second termination area; a source pickup contact connected to the first conductive region of the source pickup trenches located in the first termination area, wherein the source pickup contact connects to a source metal extending from the active area to the first termination area. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification