FinFET semiconductor device having local buried oxide

• US 9,252,272 B2
• Filed: 11/18/2013
• Issued: 02/02/2016
• Est. Priority Date: 11/18/2013
• Status: Active Grant

• Current Assignee: Wollochet Solutions LLC
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Liu, Yanxiang, Chi, Min-hwa
• Primary Examiner(s): Sefer, A.
• Application Number:
  US14/083,164
• Publication Number:
  US 20150137235A1
• Time in Patent Office: 806 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/2253 by ion implantation
• CPC Class Codes: H01L 21/283 Deposition of conductive or insulating materials for electrodes conducting electric current
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7849 the means being provided under the channel
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed a local buried oxide region aligned to the gate. In one embodiment, the local buried oxide region is formed below a channel area of the fin.

Claims

1. A semiconductor device comprising:

a substrate having a fin contiguous with the substrate extending therefrom;

a local buried oxide region formed in the fin contiguous with the substrate;

a gate, wherein the local buried oxide region is aligned to the gate so that the local buried oxide region is restricted to a location under the gate;

a channel defined in the fin above the local buried oxide region, the channel being aligned to the gate and having a first end and a second end;

a source defined at the first end of the channel; and

a drain defined at the second end of the channel.

2. The semiconductor device of claim 1, wherein one or more of the source or drain includes an extension.

3. The semiconductor device of claim 1, wherein the source includes means for reducing a short channel effect.

4. The semiconductor device of claim 1, wherein the local buried oxide region is at least partially formed in the fin.

5. The semiconductor device of claim 1, wherein the local buried oxide region is entirely formed in the fin.

6. The semiconductor device of claim 1, wherein the local buried oxide region is partially formed in the fin and partially formed in the substrate.

7. The semiconductor device of claim 1, wherein an area of the substrate below an elevation of a base of the fin includes an area of the local buried oxide region.

8. The semiconductor device of claim 1, wherein the semiconductor device is a silicon wafer having a plurality of fins extending upwardly from the substrate, wherein fins of the plurality of fins have formed therein local buried oxide regions.

9. The semiconductor device of claim 1, wherein the channel is aligned to the gate.

10. The semiconductor device of claim 1, wherein one or more of the source and drain comprises an epitaxial growth formation.

11. The semiconductor device of claim 1, wherein each of the source and drain comprises an epitaxial growth formation.

12. The semiconductor device of claim 1, wherein the source includes means for inducing stress in the channel.

13. The semiconductor device of claim 1, wherein the fin extends contiguously from the substrate.

14. The semiconductor device of claim 1, wherein the source includes an extension.

15. The semiconductor device of claim 1, wherein the local buried oxide region is entirely formed in the fin.

16. The semiconductor device of claim 1, wherein the local buried oxide region is partially formed in the fin and partially formed in the substrate.

17. The semiconductor device of claim 1, wherein the fin extends contiguously from the substrate.

18. The semiconductor device of claim 1, wherein the local buried oxide region is entirely formed in the fin.

19. A semiconductor device comprising:

a substrate having a fin contiguous with the substrate extending therefrom;

a local buried oxide region;

a gate, wherein the local buried oxide region is aligned to the gate;

a channel defined in the fin contiguous with the substrate above the local buried oxide region, the channel being aligned to the gate and having a first end and a second end;

a source defined at the first end of the channel; and

a drain defined at the second end of the channel, wherein the local buried oxide region is at least partially formed in the fin, and wherein the local buried oxide region is formed under the gate but not under the source or drain.

20. A semiconductor device comprising:

a substrate having a fin contiguous with the substrate extending from the substrate;

a local buried oxide region formed in the fin contiguous with the substrate;

a gate, wherein the local buried oxide region is aligned to the gate;

a channel defined in the fin above the local buried oxide region, the channel being aligned to the gate and having a first end and a second end;

a source defined at the first end of the channel; and

a drain defined at the second end of the channel, wherein the local buried oxide region is formed under the gate but not under the source or drain.