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Semiconductor device and method for manufacturing the same

  • US 9,252,288 B2
  • Filed: 12/24/2013
  • Issued: 02/02/2016
  • Est. Priority Date: 11/20/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising an oxide semiconductor layer,wherein the oxide semiconductor layer contains In, Ga, and Zn,wherein the oxide semiconductor layer comprises crystals represented by InGaZnO4,wherein a Zn content by atomic percent in the oxide semiconductor layer is less than an In content by atomic percent in the oxide semiconductor layer,wherein the Zn content by atomic percent in the oxide semiconductor layer is less than a Ga content by atomic percent in the oxide semiconductor layer,wherein the Ga content by atomic percent in the oxide semiconductor layer is less than the In content by atomic percent in the oxide semiconductor layer, andwherein a proportion of the crystals represented by InGaZnO4 to a whole of crystals is 80 volume % or more.

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