Inorganic hosts in OLEDs

• US 9,252,377 B2
• Filed: 07/09/2012
• Issued: 02/02/2016
• Est. Priority Date: 07/14/2011
• Status: Active Grant

• Current Assignee: Dura-Ply Roofing Corporation, Universal Display Corporation
• Original Assignee: Universal Display Corporation
• Inventors: Lin, Chun, Brown, Julia J., Dong, Angang
• Primary Examiner(s): Bohaty, Andrew K
• Application Number:
  US13/544,801
• Publication Number:
  US 20130015432A1
• Time in Patent Office: 1,303 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H10K 2101/10 Triplet emission
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots

Abstract

A novel electronic device is reported containing a host comprising an inorganic material with a band gap of less than 4 eV. The use of an inorganic material is advantageous due to its desirable physical properties, including increased stability and charge mobility.

Claims

1. A first device comprising a first organic light emitting device, the first organic light emitting device comprising:

an anode;

a cathode; and

an emissive layer, disposed between the anode and the cathode, the emissive layer comprising;

a first host comprising at least 70 wt % non-emitting inorganic material; and

a first phosphorescent emissive dopant;

wherein the first host has an energy band gap of less than 4 eV, wherein the inorganic material and the first phosphorescent emissive dopant are not attached, wherein the first host in the emissive layer is at least 50 wt % of the emissive layer.

2. The first device of claim 1, wherein the inorganic material is capped with capping groups.

3. The first device of claim 2, wherein the capping groups comprise carboxylate, amine, thiols, tetrafluoroborate, sulfide, thiocyanate, or metal chalcogenide complexes.

4. The first device of claim 2, wherein the first host comprises nanocrystals having CdSe core and a ZnS shell and 1 to 20 nm in diameter.

5. The first device of claim 1, further comprising a plurality of organic layers that are optionally disposed between the emissive layer and the cathode, wherein the organic layers do not contain the first host.

6. The first device of claim 1, wherein the inorganic material comprises one or more of the following:

a sulfide, a nitride, a carbide, or an oxide.

7. The first device of claim 1, wherein the inorganic material comprises an oxide.

8. The first device of claim 1, wherein the inorganic material comprises a sulfide.

9. The first device of claim 7, wherein the oxide comprises a metal oxide.

10. The first device of claim 8, wherein the sulfide comprises a metal sulfide.

11. The first device of claim 1, wherein the inorganic material comprises a binary compound.

12. The first device of claim 1, wherein the inorganic material comprises a ternary compound.

13. The first device of claim 1, wherein the first host has an energy band gap value between 1 to 4 eV.

14. The first device of claim 1, wherein the first phosphorescent emissive dopant has a triplet energy and the first host has an energy band gap value larger than the triplet energy of the first phosphorescent emissive dopant.

15. The first device of claim 1, wherein the first host in the emissive layer is at least 70 wt % of the emissive layer.

16. The first device of claim 15, wherein the first host in the emissive layer is at least 80 wt % of the emissive layer.

17. A method of making a first device comprising:

depositing an anode layer on a substrate;

depositing at least one emissive layer after the anode layer; and

depositing a cathode layer after the at least one emissive layer;

wherein the at least one emissive layer contains a first host comprising at least 70 wt % non-emitting inorganic material and a first phosphorescent emissive dopant, wherein the inorganic material and the first phosphorescent emissive dopant are not attached;

wherein the first host has an energy band gap of less than 4 eV, and wherein the first host in the emissive layer is at least 50 wt % of the emissive layer.

18. The method of claim 17, wherein the first host comprises nanocrystals having CdSe core and a ZnS shell and 1 to 20 nm in diameter.

19. The method of claim 17, further comprising depositing a plurality of organic layers after depositing the at least one emissive layer and before depositing the cathode, wherein the organic layers do not contain the first host.

20. The method of claim 17, wherein the inorganic material comprises one or more of the following:

a sulfide, a nitride, a carbide, or an oxide.