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Single pin control of bipolar junction transistor (BJT)-based power stage

  • US 9,253,833 B2
  • Filed: 05/16/2014
  • Issued: 02/02/2016
  • Est. Priority Date: 05/17/2013
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • an integrated circuit (IC) configured to couple to a bipolar junction transistor (BJT) through a single pin that is configured to couple to an emitter of the bipolar junction transistor (BJT), wherein the integrated circuit (IC) comprises;

    a switch configured to couple to the emitter of the bipolar junction transistor (BJT);

    a current detector coupled to the switch and configured to detect when a current from the emitter of the bipolar junction transistor (BJT) reaches a threshold value; and

    a controller coupled to the switch and to the current detector and configured to;

    control delivery of power to a load by operating the switch;

    sense a current through the bipolar junction transistor (BJT); and

    turn off the switch when the current detector detects the threshold value is reached.

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