Electronic apparatus having IC temperature control

• US 9,255,964 B2
• Filed: 04/01/2014
• Issued: 02/09/2016
• Est. Priority Date: 08/04/2005
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Kinsley, Tom
• Primary Examiner(s): TANG, MINH NHUT
• Application Number:
  US14/231,864
• Publication Number:
  US 20140210498A1
• Time in Patent Office: 679 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G01R 31/2851 Testing of integrated circuits [IC] G01R31/317 takes precedence; testing individual devices G01R31/26; testing printed circuits G01R31/2801
• CPC Class Codes: G01R 31/2856 Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]

Abstract

The use of a power sink function in IC testing results in a simple and rapid method for testing ICs, and assembled modules, at elevated temperature profiles without the use of environmental ovens. Testing IC devices at elevated temperatures may be useful for ‘burn-in’, for ‘hot sort’ performance testing that may be used in electronic devices such as DRAM memory, logic, communication devices, and microprocessors. The power sink function may be implemented as an additional isolated area of active devices, or as a section of the circuit that is not involved in the testing procedure. Alternately, the power dissipation circuit may consist of a resistive path between two external pins that are not used for IC operation, where the resistor may be on the IC or on the package. This allows for control of the temperature level and profile by simple adjustment of the voltage between the two external pins.

Claims

1. A method for controlling heating of a circuit, comprising:

determining a current temperature of the circuit in a normal operational mode;

determining a desired temperature of the circuit;

writing a first address to a mode register of the circuit, the address comprising a heat enable bit configured to enable a heat function of the circuit; and

when the current temperature is substantially equal to or greater than the desired temperature, writing a second address to the mode register, the second address comprising a heat disable bit configured to disable the heat function.

2. The method of claim 1, further comprising re-determining the current temperature and a new desired temperature of the circuit after a predetermined time period.

3. The method of claim 1, further comprising:

setting bits in the mode register to enable a power sink level of the circuit at a predetermined operating rate and voltage if the desired temperature of the circuit is greater than the current temperature of the circuit.

4. The method of claim 3 wherein setting the bits in the mode register comprises writing the bits with the first or second addresses.

5. The method of claim 1, wherein determining the current temperature of the circuit comprises reading a temperature sensor integrated on a same substrate as the circuit.

6. The method of claim 1, further comprising continuing to update the desired temperature over a period of time.

7. The method of claim 1, further comprising selecting a mode of the circuit in response to writing the first address to the mode register.

8. The method of claim 1, further comprising selecting an on die termination level in response to writing the first address to the mode register.

9. A memory device comprising:

a memory array on a substrate;

a heater circuit on the substrate; and

a mode register on the substrate, wherein the mode register is configured to control the heater circuit in response to an address written to the memory device.

10. The memory device of claim 9, further comprising a power dissipation portion disposed in a central region of the memory device.

11. The memory device of claim 10, wherein the power dissipation portion of the circuit further comprises a resistive element disposed electrically between at least two external contact pads not used by any other, non-power dissipation portion of the circuit.

12. The memory device of claim 10, wherein the mode register is further configured to control a power sink level of the power dissipation portion in response to the address written to the memory device.

13. The memory device of claim 10, wherein the power dissipation portion of the circuit includes a plurality of transistors connected in a circuit disposed in electrical isolation from a remaining portion of the circuit.

14. The memory device of claim 9, wherein the mode register comprises a mode select section, a termination level section, a heater enable section, and a power sink level section.

15. The memory device of claim 14, wherein the mode select section is configured to select one of a start-up mode or a test mode of the memory device in response to the address written to the memory device.

16. The memory device of claim 14, wherein the termination section is configured to control an on-die termination circuit in response to the address written to the memory device.

17. The memory device of claim 14, wherein the heater enable section is configured to enable or disable the heater circuit in response to the address written to the memory device.

18. The memory device of claim 14, wherein the power sink section is configured to set one of a plurality of power sink levels in response to the address written to the memory device.

19. The memory device of claim 18, wherein a plurality of bits of the address selects between a plurality of different resistance levels.

20. The memory device of claim 18, wherein the mode register is configured to select one of a plurality of power dissipation circuits in response to the address.