Through-hole via inductor in a high-frequency device

• US 9,257,221 B2
• Filed: 08/09/2012
• Issued: 02/09/2016
• Est. Priority Date: 04/13/2012
• Status: Active Grant

• Current Assignee: Cyntec Co. Ltd. (Delta Electronics Incorporated)
• Original Assignee: Cyntec Co. Ltd. (Delta Electronics Incorporated)
• Inventors: Liu, Chen-Chung, Cheng, Ian-Chun
• Primary Examiner(s): Thompson, Timothy
• Assistant Examiner(s): MCGEE III, PAUL P
• Application Number:
  US13/570,267
• Publication Number:
  US 20130271240A1
• Time in Patent Office: 1,279 Days
• Field of Search: 174/250
• US Class Current: 1/1
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 19/04 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range resonant circuits H03H
• CPC Class Codes: H01F 2017/002 Details of via holes for interconnecting the layers
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.

Claims

1. A high-frequency device, comprising:

a substrate, comprising a first through-hole therein;

a horizontal inductor having a first inductance, disposed on the substrate; and

a first through-hole via inductor having a second inductance, disposed in the first through-hole of the substrate, wherein the first through-hole via inductor is formed by disposing a conductive pillar structure in the first through-hole of the substrate, wherein the top surface of the conductive pillar structure forms a first terminal of the first through-hole via inductor and the bottom surface of the conductive pillar structure forms a second terminal of the first through-hole via inductor, wherein the first through-hole via inductor is not a part of a spiral coil and one of the terminals of first through-hole via inductor is electrically connected to the horizontal inductor, wherein the second inductance of the first through-hole via inductor is greater than the first inductance of the horizontal inductor.

2. The high-frequency device according to claim 1, wherein the high-frequency device is operated at not less than 1 GHz.

3. The high-frequency device according to claim 2, wherein the high-frequency device is operated substantially at 2.4 GHz.

4. The high-frequency device according to claim 1, wherein the resultant inductance of the first through-hole via inductor and the horizontal inductor is substantially equal to the inductance of the first through-hole via inductor.

5. The high-frequency device according to claim 1, wherein the first through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material, said conductive material overlaying on the sidewall of the first through-hole via of the substrate.

6. The high-frequency device according to claim 1, wherein the conductive pillar structure comprises:

a first conductive material overlaying on the sidewall of the first through-hole via of the substrate; and

a second conductive material enclosed by the first conductive material.

7. The high-frequency device according to claim 1, wherein the conductive pillar structure comprises a conductive material and a non-conductive material enclosed by the conductive material, the conductive material overlaying on the sidewall of the first through-hole via of the substrate.

8. The high-frequency device according to claim 1, wherein the first through-hole via inductor is disposed on the top surface of the substrate, further comprising a horizontal capacitor disposed on the bottom surface of the substrate, wherein the first terminal is electrically connected to the horizontal inductor and the second terminal is electrically connected to the horizontal capacitor.

9. The high-frequency device according to claim 1, wherein the substrate further comprises a second through-hole therein, and the horizontal inductor is disposed on the top surface of the substrate, further comprising:

a second through-hole via inductor, disposed in the second through-hole of the substrate, wherein the horizontal inductor comprises a first terminal and a second terminal, wherein the first terminal is electrically connected to the first through-hole via inductor and the second terminal is electrically connected to the second through-hole via inductor.

10. The high-frequency device according to claim 9, wherein the resultant inductance of the first through-hole via inductor and the second through-hole via inductor is greater than the inductance of the horizontal inductor.

11. The high-frequency device according to claim 9, wherein each of the first through-hole via inductor and the second through-hole via inductor comprises:

a first conductive material overlaying the sidewall of said each of the first through-hole and the second through-hole; and

a second conductive material enclosed by the first conductive material.

12. The high-frequency device according to claim 9, wherein each of the first through-hole via inductor and the second through-hole via inductor comprises a conductive material and a non-conductive material enclosed by the conductive material.

13. The high-frequency device according to claim 9, further comprising a horizontal capacitor on the bottom surface of the substrate, wherein at least one of the first through-hole via inductor and the second through-hole via inductor is electrically connected to the horizontal capacitor.

16. The high-frequency device according to claim 1, wherein the substrate is a ceramic substrate.

17. The high-frequency device according to claim 1, wherein the first through-hole via inductor has an integral body.

18. The high-frequency device according to claim 1, further comprising a capacitor formed on the bottom surface of the substrate, wherein the capacitor has a first electrode layer and a second electrode layer, wherein a dielectric layer is disposed between the first electrode layer and the second electrode layer, wherein the first electrode layer of the capacitor overlays on the bottom surface of the conductive pillar structure of the first through-hole via inductor, and the dielectric layer and the second electrode layer are disposed under the bottom surface of the substrate.

14. A high-frequency device, comprising:

a substrate having a first through-hole, a second through-hole, a third through-hole and a fourth through-hole therein;

a first U-shape through-hole via inductor, comprising;

a first through-hole via inductor having a first inductance, wherein the first through-hole via inductor is formed by disposing a first conductive pillar structure in the first through-hole of the substrate;

a second through-hole via inductor having a second inductance, wherein the second through-hole via inductor is formed by disposing a second conductive pillar structure in the second through-hole of the substrate; and

a first horizontal inductor having a third inductance, disposed on the top surface of the substrate, wherein the first horizontal inductor has a first terminal and a second terminal, wherein the first terminal is electrically connected to the first through-hole via inductor, and the second terminal is electrically connected to the second through-hole via inductor, wherein the sum of the first inductance and the second inductance is greater than the third inductance; and

a second U-shape through-hole via inductor, comprising;

a third through-hole via inductor having a fourth inductance, wherein the third through-hole via inductor is formed by disposing a third conductive pillar structure in the third through-hole of the substrate;

a fourth through-hole via inductor having a fifth inductance, wherein the fourth through-hole via inductor is formed by disposing a fourth conductive pillar structure in the fourth through-hole of the substrate; and

a second horizontal inductor having a sixth inductance, disposed on the top surface of the substrate, wherein the second horizontal inductor has a third terminal and a fourth terminal, wherein the third terminal is electrically connected to the third through-hole via inductor, and the fourth terminal is electrically connected to the fourth through-hole via inductor, wherein the sum of the fourth inductance and the fifth inductance is greater than the sixth inductance;

wherein each of the first U-shape through-hole via inductor and the second U-shape through-hole via inductor is not a part of a spiral coil.

15. The high-frequency device according to claim 14, further comprising a horizontal capacitor on the bottom surface of the substrate, wherein the first through-hole via inductor, the second through-hole via inductor, the third through-hole via inductor and the fourth through-hole via inductor are electrically connected to the horizontal capacitor.

19. A high-frequency device, comprising:

a substrate, comprising a first through-hole therein;

a first through-hole via inductor, wherein the first through-hole via inductor is formed by disposing a conductive pillar structure in the first through-hole of the substrate, wherein the top surface of the conductive pillar structure forms a first terminal of the first through-hole via inductor and the bottom surface of the conductive pillar structure forms a second terminal of the first through-hole via inductor, wherein the first through-hole via inductor is not a part of a spiral coil.

20. The high-frequency device according to claim 19, further comprising a capacitor formed on the bottom surface of the substrate, wherein the capacitor has a first electrode layer and a second electrode layer, wherein a dielectric layer is disposed between the first electrode layer and the second electrode layer, wherein the first electrode layer of the capacitor overlays on the bottom surface of the conductive pillar structure of the first through-hole via inductor, and the dielectric layer and the second electrode layer are disposed under the bottom surface of the substrate.