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Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

  • US 9,257,299 B2
  • Filed: 02/27/2014
  • Issued: 02/09/2016
  • Est. Priority Date: 09/30/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a resist and a layer to be etched on a substrate;

    forming a non-cured layer on the resist by supplying a metal compound containing Ru;

    forming a cured layer on a surface layer of the resist by using the non-cured layer; and

    etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask.

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