Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

• US 9,257,299 B2
• Filed: 02/27/2014
• Issued: 02/09/2016
• Est. Priority Date: 09/30/2013
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Aoyama, Tomonori
• Primary Examiner(s): Feeney, Brett
• Assistant Examiner(s): NGUYEN, SOPHIA T
• Application Number:
  US14/192,487
• Publication Number:
  US 20150093903A1
• Time in Patent Office: 712 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

According to one embodiment, a method of manufacturing a semiconductor device includes forming a resist and a layer to be etched on a substrate, forming a non-cured layer on the resist by supplying a metal compound containing Ru, forming a cured layer on a surface layer of the resist by using the non-cured layer, and etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

forming a resist and a layer to be etched on a substrate;

forming a non-cured layer on the resist by supplying a metal compound containing Ru;

forming a cured layer on a surface layer of the resist by using the non-cured layer; and

etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask.

2. The method according to claim 1, further comprising:

oxygen plasma asking of allowing oxygen plasma to react with the resist and the cured layer to remove the resist and the cured layer after the etching process.

3. The method according to claim 1,

wherein the metal compound is an organic metal complex.

4. The method according to claim 1,

wherein the metal compound is Ru(EtCp)₂, RuCpBuCp, or RuCpPrCp.

5. The method according to claim 1,

wherein the non-cured layer is formed by blowing the metal compound.

6. The method according to claim 1, wherein the layer to be etched contains SiO₂.

7. The method according to claim 6, wherein the metal compound reacts with the layer to be etched and forms RuO₄.

8. The method according to claim 1, wherein the metal compound includes a halide.

9. The method according to claim 1, wherein a thickness of the non-cured layer is 10 nm or less.

10. The method according to any one of claim 1,

wherein a gas containing CO is used during the reactive ion etching.

11. The method according to claim 10, wherein the gas which include the gas containing CO reacts with the non-cured layer and forms Ru₃(CO)₁₂.

12. The method according to claim 1, wherein the layer to be etched contains Si.