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Selective formation of metallic films on metallic surfaces

  • US 9,257,303 B2
  • Filed: 02/03/2015
  • Issued: 02/09/2016
  • Est. Priority Date: 06/10/2010
  • Status: Active Grant
First Claim
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising one or more deposition cycles comprising:

  • contacting the substrate with a first vapor-phase precursor; and

    contacting the substrate with a second vapor-phase precursor comprising a metal selected from W, Ta, Nb, Ti, Mo and V,wherein the film is deposited on the first metal surface relative to the second dielectric surface with a selectivity of above about 50%.

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