Selective formation of metallic films on metallic surfaces
First Claim
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising one or more deposition cycles comprising:
- contacting the substrate with a first vapor-phase precursor; and
contacting the substrate with a second vapor-phase precursor comprising a metal selected from W, Ta, Nb, Ti, Mo and V,wherein the film is deposited on the first metal surface relative to the second dielectric surface with a selectivity of above about 50%.
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Abstract
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
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19 Claims
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising one or more deposition cycles comprising:
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contacting the substrate with a first vapor-phase precursor; and contacting the substrate with a second vapor-phase precursor comprising a metal selected from W, Ta, Nb, Ti, Mo and V, wherein the film is deposited on the first metal surface relative to the second dielectric surface with a selectivity of above about 50%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for selectively depositing a film on a substrate comprising a first copper surface and a second dielectric surface, the method comprising one or more deposition cycles comprising:
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contacting the substrate with a first precursor comprising Si or B; and contacting the substrate with a second precursor comprising a metal halide, wherein metal halide comprises a metal selected from W, Ta, Nb, Ti, Mo and V; and wherein the film is deposited on the first copper surface with a selectivity of greater than about 90% relative to the second dielectric surface. - View Dependent Claims (17, 18, 19)
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Specification