Method for manufacturing through substrate via (TSV), structure and control method of TSV capacitance
First Claim
1. A method for manufacturing a through substrate via (TSV), comprising:
- providing a substrate having a first surface and a second surface;
forming a trench in the first surface of the substrate;
filling a low resistance material into the trench;
forming an insulating layer on the first surface of the substrate;
forming at least one opening in the first surface of the substrate, wherein a location of the at least one opening is different from a location of the trench;
forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the at least one opening and on the insulating layer above the first surface;
filling a conductive material into the at least one opening, wherein the at least one opening is used to form at least one via; and
after filling the conductive material into the at least one opening, forming a body contact hole on the first surface of the substrate, wherein a location of the body contact hole is the same as the location of the trench.
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Abstract
A method for manufacturing a through substrate via (TSV) structure, a TSV structure, and a control method of a TSV capacitance are provided. The method for manufacturing the TSV structure includes: providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein the opening is located differently the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the opening and on the insulating layer of the first surface; and filling a conductive material into the opening, wherein the opening is used to form at least one via.
68 Citations
16 Claims
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1. A method for manufacturing a through substrate via (TSV), comprising:
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providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein a location of the at least one opening is different from a location of the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the at least one opening and on the insulating layer above the first surface; filling a conductive material into the at least one opening, wherein the at least one opening is used to form at least one via; and after filling the conductive material into the at least one opening, forming a body contact hole on the first surface of the substrate, wherein a location of the body contact hole is the same as the location of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A control method of a TSV capacitance, comprising:
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providing a substrate and the TSV capacitance, wherein the substrate includes a first surface and a second surface, wherein at least one opening is formed in the first surface of the substrate, wherein a conductive material, a conductive seed layer, a barrier layer and an oxide liner layer are disposed from interior to exterior on a sidewall of the at least one opening, and the TSV capacitance is formed between the conductive material and the substrate, wherein the at least one opening is used to form at least one via; applying a first voltage to the conductive material of the at least one opening; and applying a second voltage to the substrate to control the TSV capacitance. - View Dependent Claims (14, 15, 16)
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Specification