Decoupling MIM capacitor designs for interposers and methods of manufacture thereof
First Claim
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1. A device comprising:
- an interposer, the interposer having a decoupling metal-insulator-metal (MIM) capacitor formed therein, wherein the decoupling MIM capacitor comprises a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric, wherein the top electrode has a first portion having a first width and a second portion having a second width, the first width being larger than the second width;
a first contact pad on a first surface of the interposer;
a second contact pad on a second surface of the interposer, the second surface being opposite to the first surface; and
an integrated circuit die mounted on the first contact pad, the decoupling MIM capacitor being electrically coupled between the integrated circuit die and the second contact pad.
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Abstract
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.
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Citations
20 Claims
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1. A device comprising:
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an interposer, the interposer having a decoupling metal-insulator-metal (MIM) capacitor formed therein, wherein the decoupling MIM capacitor comprises a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric, wherein the top electrode has a first portion having a first width and a second portion having a second width, the first width being larger than the second width; a first contact pad on a first surface of the interposer; a second contact pad on a second surface of the interposer, the second surface being opposite to the first surface; and an integrated circuit die mounted on the first contact pad, the decoupling MIM capacitor being electrically coupled between the integrated circuit die and the second contact pad. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device comprising:
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an interposer, the interposer comprising; a substrate, the substrate having one or more through-substrate vias (TSVs) and a contact pad; a first metallization layer over the substrate and a second metallization layer over the first metallization layer, wherein portions of the first metallization layer is in direct contact with respective ones of the one or more TSVs; and a decoupling metal-insulator-metal (MIM) capacitor in the second metallization layer, the decoupling MIM capacitor comprising a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric; and an integrated circuit die mounted to the interposer, wherein the decoupling MIM capacitor is electrically coupled between the integrated circuit die and the contact pad. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A device comprising:
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a substrate, the substrate having one or more contact pads; one or more metallization layers over the substrate; a bottom plate pick-up in a first metallization layer of the one or more metallization layers; a decoupling metal-insulator-metal (MIM) capacitor in the one or more metallization layers, the decoupling MIM capacitor comprising a first electrode, a second electrode, and a capacitor dielectric interposed between the first electrode and the second electrode; a top plate pick-up in a second metallization layer of the one or more metallization layers, the second metallization layer being over the first metallization layer; and an integrated circuit die electrically coupled to a first contact pad of the one or more contact pads, wherein the decoupling MIM capacitor is electrically coupled between the integrated circuit die and a second contact pad of the one or more contact pads. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification