Semiconductor field effect power switching device
First Claim
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1. A semiconductor device comprising:
- a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction;
a source metallization arranged on the first surface; and
a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion,the first trench portion comprising a sidewall adjacent to the second semiconductor region, an insulating layer arranged on the side wall, the insulating layer adjoining the first semiconductor region and the second semiconductor region, and a gate electrode connected to the source metallization;
the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region.
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Abstract
A semiconductor device having a semiconductor body, a source metallization arranged on a first surface of the semiconductor body and a trench including a first trench portion and a second trench portion and extending from the first surface into the semiconductor body is provided. The semiconductor body further includes a pn-junction formed between a first semiconductor region and a second semiconductor region. The first trench portion includes an insulated gate electrode which is connected to the source metallization, and the second trench portion includes a conductive plug which is connected to the source metallization and to the second semiconductor region.
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Citations
25 Claims
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1. A semiconductor device comprising:
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a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction; a source metallization arranged on the first surface; and a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion, the first trench portion comprising a sidewall adjacent to the second semiconductor region, an insulating layer arranged on the side wall, the insulating layer adjoining the first semiconductor region and the second semiconductor region, and a gate electrode connected to the source metallization;
the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a source metallization; a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first insulated gate electrode; and a trench comprising a first trench portion and a second trench portion, the first trench portion comprising a second insulated gate electrode connected to the source metallization;
the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region, wherein the source region adjoins the first trench portion. - View Dependent Claims (11, 12, 13)
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14. A power semiconductor device comprising:
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a source metallization; a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first trench comprising an insulated gate electrode; a second trench comprising a first trench portion and a second trench portion, the first trench portion comprising an insulating layer adjoining at least the body region, and a second gate electrode connected to the source metallization;
the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region, anda fourth semiconductor region adjoining the drift region, the body region and the insulating layer;
wherein the fourth semiconductor region is selected from a group consisting of a semiconductor region of the first conductivity type and a weakly doped semiconductor region of the second conductivity type. - View Dependent Claims (15, 16)
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17. A method for forming a semiconductor device comprising:
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providing a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction; forming a trench such that the trench extends from the first surface into the semiconductor body and comprises, in a horizontal plane substantially parallel to the first surface, a first trench portion and second trench portion; forming an insulating layer on a sidewall of the first trench portion so that the insulating layer adjoins the first semiconductor region and the second semiconductor region; forming a gate electrode in the first trench portion; forming a conductive plug in the second trench portion such that the conductive plug is connected with the second semiconductor region; and forming a source metallization on the first surface such that the source metallization is connected to the gate electrode and the conductive plug. - View Dependent Claims (18)
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19. A semiconductor device comprising:
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a source metallization; a first field-effect structure including a source region of a first conductivity type, the source region being electrically connected to the source metallization;
a body region of a second conductivity type adjacent to the source region;
a first gate electrode and a first insulating region arranged at least between the first gate electrode and the body region, the first gate electrode, the first insulating region and the body region forming a first capacitance, the first capacitance having a first capacitance per unit area;a second field-effect structure including a source region of the first conductivity type;
a body region of the second conductivity type adjacent to the source region;
an electrode structure and a second insulating region which is, in a first vertical cross-section, arranged at least between the electrode structure and the body region, and adjoins the source region in the first vertical cross-section, the source region and the electrode structure being electrically connected to the source metallization;
the electrode structure, the second insulating region and the body region forming a second capacitance, the second capacitance having a second capacitance per unit area; andthe second capacitance per unit area being larger than the first capacitance per unit area. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification