Display panel and manufacturing method thereof
First Claim
1. A method of manufacturing a display panel, the method comprising, in sequence:
- providing a substrate, the substrate comprising a first surface and a second surface opposite to the first surface;
forming a gate electrode extending along a first direction on the first surface;
forming a gate insulator, a semiconductor layer, and an etch stop layer to cover the gate electrode;
forming a photoresist layer to cover the etch stop layer;
patterning the photoresist layer by exposing the photoresist layer to light incident to the first surface through a first mask, thereby forming a first photoresist pattern;
patterning the first photoresist pattern by exposing the first photoresist pattern to light incident the second surface, using the gate electrode as a second mask, thereby forming a second photoresist pattern from the second surface by using the gate electrode as a second mask;
etching the etch stop layer by a dry etch process using the second photoresist pattern as a first etching mask to form an etch stop pattern having a smaller surface area than the second photoresist pattern;
removing the second photoresist pattern remaining after the dry etch process and forming a second photoresist layer to cover the etch stop pattern and the semiconductor layer;
patterning the second photoresist layer by exposing the second photoresist layer to light incident first surface using the first mask, thereby forming a fourth photoresist pattern on the etch stop pattern;
patterning the fourth photoresist pattern by exposing the fourth photoresist pattern to light incident the second surface using the gate electrode as the second mask thereby forming a fifth photoresist pattern;
etching the semiconductor layer by a second wet etch process using the fifth photoresist pattern as a second etching mask to form a semiconductor pattern corresponding to the second photoresist pattern;
removing the forth photoresist pattern remaining after the second wet etch process; and
forming a source electrode and a drain electrode respectively at two symmetric sides of the gate electrode, and both of the source electrode and drain electrode covering the etch stop pattern, the semiconductor pattern, and the gate insulator.
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Accused Products
Abstract
A display panel manufacturing method includes forming a gate electrode on a substrate and a gate insulator, a semiconductor layer, and an etch stop layer covering the gate electrode. A photoresist layer covering on the etch stop layer is pattern from two opposite side of the substrate by two photolithography processes to form a photoresist pattern. The etch stop layer is dry etched to form an etch stop pattern via the photoresist pattern. The photoresist pattern is formed again by two photolithography processes. The semiconductor layer is wet etched to form a semiconductor pattern via the photoresist pattern. A source electrode and a drain electrode is formed corresponding to two opposite sides of the gate electrode to orderly cover the etch pattern, the semiconductor pattern, and the gate insulator.
15 Citations
10 Claims
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1. A method of manufacturing a display panel, the method comprising, in sequence:
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providing a substrate, the substrate comprising a first surface and a second surface opposite to the first surface; forming a gate electrode extending along a first direction on the first surface; forming a gate insulator, a semiconductor layer, and an etch stop layer to cover the gate electrode; forming a photoresist layer to cover the etch stop layer; patterning the photoresist layer by exposing the photoresist layer to light incident to the first surface through a first mask, thereby forming a first photoresist pattern; patterning the first photoresist pattern by exposing the first photoresist pattern to light incident the second surface, using the gate electrode as a second mask, thereby forming a second photoresist pattern from the second surface by using the gate electrode as a second mask; etching the etch stop layer by a dry etch process using the second photoresist pattern as a first etching mask to form an etch stop pattern having a smaller surface area than the second photoresist pattern; removing the second photoresist pattern remaining after the dry etch process and forming a second photoresist layer to cover the etch stop pattern and the semiconductor layer; patterning the second photoresist layer by exposing the second photoresist layer to light incident first surface using the first mask, thereby forming a fourth photoresist pattern on the etch stop pattern; patterning the fourth photoresist pattern by exposing the fourth photoresist pattern to light incident the second surface using the gate electrode as the second mask thereby forming a fifth photoresist pattern; etching the semiconductor layer by a second wet etch process using the fifth photoresist pattern as a second etching mask to form a semiconductor pattern corresponding to the second photoresist pattern; removing the forth photoresist pattern remaining after the second wet etch process; and forming a source electrode and a drain electrode respectively at two symmetric sides of the gate electrode, and both of the source electrode and drain electrode covering the etch stop pattern, the semiconductor pattern, and the gate insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification