Memory gate first approach to forming a split gate flash memory cell device
First Claim
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1. A split gate flash memory cell device, comprising:
- a semiconductor substrate including a first source/drain region and a second source/drain region;
a select gate and a memory gate spaced over the semiconductor substrate between the first and second source/drain regions;
a line-shaped charge trapping dielectric structure arranged between the semiconductor substrate and the memory gate; and
a sidewall layer laterally spaced from the select and memory gates, and confined to sidewalls of spacer layers laterally spacing the sidewall layer from the select and memory gates;
wherein the line-shaped charge trapping dielectric structure includes;
a tunneling structure;
a memory gate dielectric structure arranged over the tunneling structure; and
a charge storage structure arranged over the tunneling structure between the tunneling structure and the memory gate dielectric structure.
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Abstract
A split gate flash memory cell device with a line-shaped charge trapping dielectric structure is provided. A semiconductor substrate includes a first source/drain region and a second source/drain region. A select gate and a memory gate are spaced over the semiconductor substrate between the first and second source/drain regions. A line-shaped charge trapping dielectric structure is arranged between the semiconductor substrate and the memory gate. A method for manufacturing the split gate flash memory cell device is also provided.
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Citations
20 Claims
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1. A split gate flash memory cell device, comprising:
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a semiconductor substrate including a first source/drain region and a second source/drain region; a select gate and a memory gate spaced over the semiconductor substrate between the first and second source/drain regions; a line-shaped charge trapping dielectric structure arranged between the semiconductor substrate and the memory gate; and a sidewall layer laterally spaced from the select and memory gates, and confined to sidewalls of spacer layers laterally spacing the sidewall layer from the select and memory gates; wherein the line-shaped charge trapping dielectric structure includes; a tunneling structure; a memory gate dielectric structure arranged over the tunneling structure; and a charge storage structure arranged over the tunneling structure between the tunneling structure and the memory gate dielectric structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a split gate flash memory cell device, the method comprising:
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forming a charge trapping dielectric layer and a memory gate layer over a semiconductor substrate; performing a first etch through the charge trapping dielectric layer to form a memory gate and to form a line-shaped charge trapping dielectric structure between the memory gate and the semiconductor substrate; forming a conformal select gate layer over the line-shaped charge trapping dielectric structure and the memory gate; and performing a second etch through the conformal select gate layer to form a select gate over the semiconductor substrate adjacent to the memory gate. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a split gate flash memory cell device, the method comprising:
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forming a memory gate over a semiconductor substrate; forming a line-shaped charge trapping dielectric structure between the memory gate and the semiconductor substrate, wherein forming the line-shaped charge trapping dielectric structure comprises forming a plurality of layers that are stacked between the memory gate and the semiconductor substrate and that are confined directly under the memory gate; forming a select gate over the semiconductor substrate adjacent to the memory gate; forming a sidewall layer laterally spaced from the select and memory gates, and confined to sidewalls of spacer layers laterally spacing the sidewall layer from the select and memory gates; and performing a planarization into the memory gate and the select gate to co-planarize upper surfaces of the memory gate and the select gate. - View Dependent Claims (19, 20)
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Specification