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Memory gate first approach to forming a split gate flash memory cell device

  • US 9,257,571 B1
  • Filed: 09/05/2014
  • Issued: 02/09/2016
  • Est. Priority Date: 09/05/2014
  • Status: Active Grant
First Claim
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1. A split gate flash memory cell device, comprising:

  • a semiconductor substrate including a first source/drain region and a second source/drain region;

    a select gate and a memory gate spaced over the semiconductor substrate between the first and second source/drain regions;

    a line-shaped charge trapping dielectric structure arranged between the semiconductor substrate and the memory gate; and

    a sidewall layer laterally spaced from the select and memory gates, and confined to sidewalls of spacer layers laterally spacing the sidewall layer from the select and memory gates;

    wherein the line-shaped charge trapping dielectric structure includes;

    a tunneling structure;

    a memory gate dielectric structure arranged over the tunneling structure; and

    a charge storage structure arranged over the tunneling structure between the tunneling structure and the memory gate dielectric structure.

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