Light emitting diode and manufacturing method thereof

• US 9,257,610 B2
• Filed: 05/29/2014
• Issued: 02/09/2016
• Est. Priority Date: 06/17/2013
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Youn, Doo Hyeb, Yu, Young-Jun, Chung, Kwang Hyo, Choi, Choon Gi
• Primary Examiner(s): Kim, Su C
• Assistant Examiner(s): Mirsalahuddin, Junaiden
• Application Number:
  US14/290,192
• Publication Number:
  US 20140367731A1
• Time in Patent Office: 621 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.

Claims

1. A method of manufacturing a light emitting diode, the method comprising:

forming an n-type semiconductor layer on a substrate;

forming an active layer on the n-type semiconductor layer;

forming a p-type semiconductor layer on the active layer;

forming a first electrode by electrospinning after disposing a mask on the p-type semiconductor layer;

forming a second electrode made of graphene on the first electrode after moving the mask;

forming a p-type electrode on the second electrode; and

forming an n-type electrode on the n-type semiconductor layer.

2. The method of claim 1, wherein the forming of the first electrode comprises:

disposing a first mask having a first linear opening pattern;

forming a first conductive pattern of the first electrode by injecting a spinning solution into the first opening pattern;

disposing a second mask having a second linear opening pattern above the first opening pattern; and

forming a second conductive pattern of the first electrode by injecting the spinning solution into the second opening pattern,

wherein the second opening pattern and the first opening pattern are disposed to cross each other.

3. The method of claim 2, wherein the spinning solution has a viscosity in a range of 10 cps to 50 cps.

4. The method of claim 3, wherein the spinning solution comprises metal salt such as copper acetate monohydrate ((CH₃COO)₂Cu), titanium tetraisopropoxide (Ti(OCH(CH₃)₂)₄), tin isopropoxide (Sn(OCH(CH₃)₂)₄), and antimony isopropoxide (C₉H₂₁O₃Sb) including metal particles such as zinc (Zn), phosphorus (P), titanium (Ti), tin (Sn), copper (Cu) and antimony (Sb);

and a solvent having a viscosity in a range of 10 cps to 50 cps.

5. The method of claim 4, wherein the solvent comprises at least one of diethylene glycol, terpineol, ethylene glycol, diethylene glycol monobenzyl ether, propylene glycol monophenyl ether, glycerol, propylene glycol, and triethylene glycol.