Semiconductor light emitting device
First Claim
1. A semiconductor light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;
a metal support layer disposed under the second conductive semiconductor layer;
an insulating layer disposed between the second conductive semiconductor layer and the metal support layer; and
a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer,wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts,wherein the plurality of upper parts of the stepped conductive layer are directly contacted with the second conductive semiconductor layer,wherein the plurality of lower parts of the stepped conductive layer are disposed between the insulating layer and the metal support layer,wherein the insulating layer is disposed at a region between the plurality of upper parts, andwherein the metal support layer includes a plurality protrusions protruded toward the plurality of upper parts.
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Accused Products
Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a metal support layer having a plurality of protrusions disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the metal support layer, and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the metal support layer. The insulating layer is laterally disposed between the plurality of upper parts.
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Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers; a metal support layer disposed under the second conductive semiconductor layer; an insulating layer disposed between the second conductive semiconductor layer and the metal support layer; and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer, wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts, wherein the plurality of upper parts of the stepped conductive layer are directly contacted with the second conductive semiconductor layer, wherein the plurality of lower parts of the stepped conductive layer are disposed between the insulating layer and the metal support layer, wherein the insulating layer is disposed at a region between the plurality of upper parts, and wherein the metal support layer includes a plurality protrusions protruded toward the plurality of upper parts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor light emitting device comprising:
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a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers; a metal support layer disposed under the second conductive semiconductor layer; an insulating layer disposed between the second conductive semiconductor layer and the metal support layer; and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer; wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts, wherein the plurality of upper parts are directly contacted with the second conductive semiconductor layer, wherein the plurality of lower parts are disposed between the insulating layer and the metal support layer, wherein the insulating layer includes a plurality of regions overlapped vertically between the second conductive semiconductor layer and the lower parts, wherein each of the plurality of regions of the insulating layer is directly contacted with a bottom surface of the second conductive semiconductor layer, and wherein the metal support layer includes a plurality protrusions protruded toward the plurality of upper parts. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor light emitting device comprising:
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a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers; a metal support layer disposed under the second conductive semiconductor layer; an insulating layer includes a plurality of regions spaced apart from each other between the second conductive semiconductor layer and the metal support layer; and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer, wherein an outer region of the insulating layer is outwardly extended from an outer sidewall of the light emitting structure, and wherein the metal support layer includes a plurality protrusions protruded toward the plurality of regions of the insulating layer. - View Dependent Claims (18, 19, 20)
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Specification