Semiconductor light emitting device

• US 9,257,625 B2
• Filed: 04/23/2015
• Issued: 02/09/2016
• Est. Priority Date: 11/14/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US14/694,741
• Publication Number:
  US 20150228877A1
• Time in Patent Office: 292 Days
• Field of Search: 257/98, 257/99, 257/100, 257/E33.06, 257/E33.059, 257/E33.062
• US Class Current: 1/1
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a metal support layer having a plurality of protrusions disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the metal support layer, and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the metal support layer. The insulating layer is laterally disposed between the plurality of upper parts.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;

a metal support layer disposed under the second conductive semiconductor layer;

an insulating layer disposed between the second conductive semiconductor layer and the metal support layer; and

a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer,

wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts,

wherein the plurality of upper parts of the stepped conductive layer are directly contacted with the second conductive semiconductor layer,

wherein the plurality of lower parts of the stepped conductive layer are disposed between the insulating layer and the metal support layer,

wherein the insulating layer is disposed at a region between the plurality of upper parts, and

wherein the metal support layer includes a plurality protrusions protruded toward the plurality of upper parts.

2. The semiconductor light emitting device of claim 1, wherein the plurality of lower parts are directly contacted with a lower surface of the insulating layer.

3. The semiconductor light emitting device of claim 1, wherein the insulating layer includes a plurality of regions spaced apart from each other between the plurality of upper parts of the stepped conductive layer.

4. The semiconductor light emitting device of claim 1, wherein the region of the insulating layer is overlapped to each of the plurality of lower parts of the stepped conductive layer in a vertical direction.

5. The semiconductor light emitting device of claim 3, wherein an outer part of the stepped conductive layer is horizontally extended from the lower part of the stepped conductive layer.

6. The semiconductor light emitting device of claim 5, wherein the outer part of the stepped conductive layer is vertically overlapped with an outer region of the insulating layer.

7. The semiconductor light emitting device of claim 6, wherein a top of the outer region of the insulating layer is located at an outer position than an outer sidewall of the light emitting structure.

8. The semiconductor light emitting device of claim 6, wherein the top of the outer region of the insulating layer is not overlapped with the light emitting structure in a vertical direction.

9. The semiconductor light emitting device of claim 5, wherein the outer part of the stepped conductive layer is not overlapped with the light emitting structure in a vertical direction.

10. The semiconductor light emitting device of claim 3, wherein the metal support layer includes at least one of Au, Ni, Cu and W.

11. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;

a metal support layer disposed under the second conductive semiconductor layer;

an insulating layer disposed between the second conductive semiconductor layer and the metal support layer; and

a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer;

wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts,

wherein the plurality of upper parts are directly contacted with the second conductive semiconductor layer,

wherein the plurality of lower parts are disposed between the insulating layer and the metal support layer,

wherein the insulating layer includes a plurality of regions overlapped vertically between the second conductive semiconductor layer and the lower parts,

wherein each of the plurality of regions of the insulating layer is directly contacted with a bottom surface of the second conductive semiconductor layer, and

wherein the metal support layer includes a plurality protrusions protruded toward the plurality of upper parts.

12. The semiconductor light emitting device of claim 11, wherein the metal support layer includes at least one of Au, Ni, Cu and W.

13. The semiconductor light emitting device of claim 11, wherein at least one of the plurality of upper parts of the stepped conductive layer is disposed between the plurality of regions of the insulating layer.

14. The semiconductor light emitting device of claim 11, wherein each of the plurality of regions of the insulating layer are contacted with each of the plurality of lower parts of the stepped conductive layer.

15. The semiconductor light emitting device of claim 11, wherein an outer part of the stepped conductive layer is horizontally extended from the lower part.

16. The semiconductor light emitting device of claim 15, wherein the outer part of the stepped conductive layer is vertically overlapped with an outer region of the insulating layer,

wherein a top of the outer region of the insulating layer is exposed on an outer sidewall of the light emitting structure.

17. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;

a metal support layer disposed under the second conductive semiconductor layer;

an insulating layer includes a plurality of regions spaced apart from each other between the second conductive semiconductor layer and the metal support layer; and

a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer,

wherein an outer region of the insulating layer is outwardly extended from an outer sidewall of the light emitting structure, and

wherein the metal support layer includes a plurality protrusions protruded toward the plurality of regions of the insulating layer.

18. The semiconductor light emitting device of claim 17, wherein the outer region of the insulating layer is not overlapped with the light emitting structure in a vertical direction.

19. The semiconductor light emitting device of claim 17, wherein an outer part of the stepped conductive layer is not overlapped with the light emitting structure in a vertical direction.

20. The semiconductor light emitting device of claim 19, wherein the outer part of the stepped conductive layer is horizontally extended from a lower part of the stepped conductive layer.