Microphone structure

• US 9,258,652 B2
• Filed: 04/04/2014
• Issued: 02/09/2016
• Est. Priority Date: 11/18/2011
• Status: Active Grant

• Current Assignee: Chuan-Wei Wang
• Original Assignee: Chuan-Wei Wang
• Inventors: Wang, Chuan-Wei
• Primary Examiner(s): Tsang, Fan
• Assistant Examiner(s): McKinney, Angelica M
• Application Number:
  US14/245,558
• Publication Number:
  US 20140217522A1
• Time in Patent Office: 676 Days
• US Class Current: 1/1
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182

Abstract

A microphone structure is disclosed. The microphone structure comprises a substrate penetrated with at least one opening chamber and having an insulation surface. A conduction layer is arranged on the insulation surface and arranged over the opening chamber. An insulation layer is arranged on the conduction layer and having a opening to expose a part of the conduction layer as a vibration block arranged over the opening chamber. At least two first patterned electrodes are arranged on the insulation layer and arranged over the vibration block. At least two second patterned electrodes are arranged over the opening chamber, arranged on the vibration block and separated from the first patterned electrodes by at least two first gaps. When the vibration block vibrates, the vibration block moves the second patterned electrodes whereby the second patterned electrodes and the first patterned electrodes perform differential sensing.

Claims

1. A microphone structure, comprising:

a substrate penetrated with at least one opening chamber and having an insulation surface;

a conduction layer arranged on said insulation surface and arranged over said opening chamber;

an insulation layer arranged on said conduction layer and having a first opening to expose a part of said conduction layer as a vibration block arranged over said opening chamber;

at least two first patterned electrodes arranged on said insulation layer and arranged over said vibration block; and

at least two second patterned electrodes arranged over said opening chamber and arranged on said vibration block, and said first and second patterned electrodes are disposed on different regions of a same side of a conduction surface of said conduction layer, and a first gap exists between said second patterned electrode and neighboring said first patterned electrode, and when said vibration block vibrates, said vibration block moves said second patterned electrodes whereby said second patterned electrodes and said first patterned electrodes perform differential sensing, wherein the second patterned electrodes are disposed directly on said conduction layer.

2. The microphone structure as claimed in claim 1, wherein each said first patterned electrode comprises a first electrode block and a second electrode block adjacent to each other, and said first electrode block is arranged on said insulation layer, and said second electrode block is arranged over said vibration block, and said first patterned electrodes are symmetrical with a line being an axis, and said second patterned electrodes respectively neighbor said second electrode blocks, and said second patterned electrodes are symmetrical with said axis.

3. The microphone structure as claimed in claim 1, wherein said first patterned electrodes are arranged over said opening chamber.

4. The microphone structure as claimed in claim 1, wherein said conduction layer further comprises at least two first supporting blocks arranged between said insulation surface and said insulation layer, and said vibration block further comprises at least two sensed blocks, a diaphragm block, at least two second supporting blocks and at least two moved blocks, and said diaphragm block, said second supporting blocks and said moved blocks are adjacent to each other, and said moved blocks and said second supporting blocks are arranged outside said diaphragm block, and said second supporting blocks are arranged on said insulation surface, and said diaphragm block is arranged over said opening chamber, and said first supporting blocks and said sensed blocks are respectively adjacent to each other, and said first supporting blocks are respectively arranged outside said sensed blocks, and said moved blocks and said sensed blocks are arranged over said opening chamber, and said moved blocks are respectively separated from said sensed blocks by at least one second gaps, and said first patterned electrodes are arranged on said insulation layer and said sensed blocks, and said second patterned electrodes are arranged on said moved blocks, and said diaphragm block vibrates to move said second patterned electrodes.

5. The microphone structure as claimed in claim 1, wherein said at least one opening chamber is at least two opening chambers, and said conduction layer further comprises a supporting block arranged between said insulation surface and said insulation layer, and said vibration block is arranged on said insulation surface and over said opening chambers, and said vibration block and said supporting block are independent to each other, and each said first patterned electrode comprises a first electrode block and a second electrode block adjacent to each other, and said first electrode block is arranged on said insulation layer, and said second electrode block is arranged over said vibration block, and one said second electrode block is arranged outside another said second electrode block, and said second patterned electrodes are uniformly arranged between said second electrode blocks.

6. The microphone structure as claimed in claim 1, wherein said substrate is a silicon substrate.

7. The microphone structure as claimed in claim 2, wherein each said second electrode block further comprises at least five second openings to expose said vibration block.

8. The microphone structure as claimed in claim 2, wherein said at least two first patterned electrodes are four said first patterned electrodes.

9. The microphone structure as claimed in claim 4, wherein said sensed blocks are symmetrical with a line being an axis, and said moved blocks are symmetrical with said axis.

10. A microphone structure, comprising:

a substrate penetrated with at least one opening chamber and having an insulation surface;

a conduction layer arranged on said insulation surface and arranged over said opening chamber;

an insulation layer arranged on said conduction layer and having a first opening to expose a part of said conduction layer as a vibration block arranged over said opening chamber;

at least two first patterned electrodes arranged on said insulation layer and arranged over said vibration block; and

at least two second patterned electrodes arranged over said opening chamber and arranged on said vibration block, and said first and second patterned electrodes are disposed on different regions of a same side of a conduction surface of said conduction layer, and a first gap exists between said second patterned electrode and neighboring said first patterned electrode, and said conduction layer further comprises a supporting block arranged between said insulation surface and said insulation layer, and said vibration block and said supporting block are independent to each other, and said first patterned electrodes are respectively arranged at two opposite sides of a plane, and said second patterned electrodes are respectively arranged at said sides of said plane, and said vibration block further comprises a first sub-vibration block and a second sub-vibration block which are adjacent to each other and respectively arranged at said sides of said plane, and said first sub-vibration block and said second sub-vibration block are asymmetrical, and when said vibration block vibrates, said vibration block moves said second patterned electrodes whereby said second patterned electrodes and said first patterned electrodes perform differential sensing, wherein said plane is perpendicular to said conduction layer.

11. A microphone structure, comprising:

a substrate penetrated with an opening chamber and having an insulation surface; and

an electrode layer, disposed on said insulation surface, a silicon layer that includes at least a second patterned electrode and at least a second electrode block for performing gap-closing sensing, wherein the at least one second patterned electrode is disposed inside the second electrode block, said second patterned electrode is used as a diaphragm, and said second patterned electrode and said second electrode block are separated by at least two different co-planar gaps connecting with said opening chamber.