Uncooled microbolometer detector and array for terahertz detection

• US 9,261,411 B2
• Filed: 12/19/2012
• Issued: 02/16/2016
• Est. Priority Date: 12/19/2012
• Status: Active Grant

• Current Assignee: Institut national d'optique
• Original Assignee: Institut national d'optique
• Inventors: Oulachgar, Hassane, Jerominek, Hubert, Alain, Christine, Mauskopf, Philip, Bolduc, Martin, Ilias, Samir
• Primary Examiner(s): Bryant, Casey
• Application Number:
  US13/720,317
• Publication Number:
  US 20140166882A1
• Time in Patent Office: 1,154 Days
• Field of Search: 250/338.4, 250/338.1, 250/349
• US Class Current: 1/1
• CPC Class Codes: G01J 5/0804 Shutters
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

An uncooled microbolometer detector that includes a substrate, a platform held above the substrate by a support structure, at least one thermistor provided on the platform, and an optical absorber. The optical absorber includes at least one electrically conductive layer extending on the platform over and in thermal contact with the at least one thermistor and patterned to form a resonant structure defining an absorption spectrum of the uncooled microbolometer detector. The optical absorber is exposed to electromagnetic radiation and absorbs the electromagnetic radiation according to the absorption spectrum. A microbolometer array including a plurality of uncooled microbolometer detectors arranged in a two-dimensional array is also provided. Advantageously, these embodiments allow extending the absorption spectrum of conventional infrared uncooled microbolometer detectors to the terahertz region of the electromagnetic spectrum.

Claims

1. An uncooled microbolometer detector comprising:

a substrate;

a platform held above the substrate by a support structure;

at least one thermistor provided on the platform; and

an optical absorber extending on the platform over and in thermal contact with the at least one thermistor, the optical absorber comprising a first electrically conductive layer patterned to form a capacitive structure operating as a low-pass spectral filter and a second electrically conductive layer patterned to form an inductive structure operating as a high-pass spectral filter, the capacitive structure and the inductive structure together forming a resonant structure defining an absorption spectrum of the optical absorber, the optical absorber being exposed to electromagnetic radiation and absorbing the electromagnetic radiation according to the absorption spectrum.

2. The uncooled microbolometer detector according to claim 1, wherein the optical absorber further comprises an electrically insulating layer disposed between the first and second electrically conductive layers.

3. The uncooled microbolometer detector according to claim 1, wherein:

the capacitive structure comprises a cross-shaped slot patterned through the first electrically conductive layer; and

the inductive structure comprises inductive elements patterned in the second electrically conductive layer, the inductive elements being electromagnetically coupled to the cross-shaped slot.

4. The uncooled microbolometer detector according to claim 3, wherein the cross-shaped slot has four arms extending outwardly from a center thereof, with adjacent arms extending at right angles relative to each other, and wherein each inductive element extends substantially orthogonally across a corresponding one of the four arms of the cross-shaped slot.

5. The uncooled microbolometer detector according to claim 1, wherein each of the least one thermistor comprises a thin film of one of vanadium oxide and amorphous silicon.

6. The uncooled microbolometer detector according to claim 1, wherein the optical absorber is configured to absorb the electromagnetic radiation in a wavelength range of between about 30 and 3000 micrometers.

7. The uncooled microbolometer detector according to claim 1, wherein the absorption spectrum of the uncooled microbolometer detector comprises a plurality of absorption bands.

8. The uncooled microbolometer detector according to claim 1, further comprising a radiation reflecting mirror provided on the substrate and disposed under the platform.

9. The uncooled microbolometer detector according to claim 1, further comprising a spectral filter supported above the platform in a spaced relationship therewith and configured to pre-filter the electromagnetic radiation before the electromagnetic radiation impinges onto the optical absorber.

10. The uncooled microbolometer detector according to claim 9, wherein the spectral filter comprises a low-pass filter.

11. The uncooled microbolometer detector according to claim 10, wherein the low-pass filter is a capacitive filter.

12. A microbolometer array comprising a plurality of uncooled microbolometer detectors according to claim 1, wherein the plurality of microbolometer detectors is arranged in a two-dimensional array.

13. The microbolometer array according to claim 12, wherein the plurality of uncooled microbolometer detectors is divided in a number of subsets of uncooled microbolometer detectors, the absorption spectrum of the uncooled microbolometer detectors of each subset being different from one another.