Method for manufacturing semiconductor optical waveguide device, and semiconductor optical waveguide device
First Claim
1. A method for manufacturing a semiconductor optical waveguide device, comprising the steps of:
- preparing a substrate having a principal surface, the principal surface including a first area and a second area sequentially arranged along a waveguide axis;
forming a stacked semiconductor layer on the principal surface of the substrate, the stacked semiconductor layer including an upper cladding layer, a first core layer, an intermediate cladding layer, and a second core layer;
forming a waveguide mesa having a first portion and a second portion on the first area and the second area of the substrate, respectively, by etching the stacked semiconductor layer through a first mask, the first portion and the second portion including the upper cladding layer and the first core layer;
forming a dummy buried region that embeds a top surface and side surfaces of the waveguide mesa;
forming a second mask on the dummy buried region, the second mask having an opening on the first portion of the waveguide mesa and having a pattern on the second portion of the waveguide mesa;
forming a third mask having an opening that reaches a top surface of the first portion of the waveguide mesa, the third mask including a dummy buried mask formed by etching the dummy buried region through the second mask;
forming an upper mesa having a first upper mesa portion and a second upper mesa portion on the first area and the second area of the substrate, respectively, by etching the waveguide mesa through the third mask; and
after removing the third mask, forming a lower mesa including the second core layer by etching the stacked semiconductor layer, the lower mesa having a greater width than a width of the upper mesa.
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Accused Products
Abstract
A method for manufacturing a semiconductor optical waveguide device includes the steps of forming a waveguide mesa having first and second portions by etching a stacked semiconductor layer through a first mask; forming a dummy buried region embedding a top surface and side surfaces of the waveguide mesa; forming a second mask on the dummy buried region, the second mask having an opening on the first portion and having a pattern on the second portion; forming a third mask having an opening that reaches a top surface of the first portion, the third mask including a dummy buried mask formed by etching the dummy buried region through the second mask; forming an upper mesa by etching the waveguide mesa through the third mask; and after removing the third mask, forming a lower mesa by etching the stacked semiconductor layer, the lower mesa having a greater width than that of the upper mesa.
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Citations
12 Claims
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1. A method for manufacturing a semiconductor optical waveguide device, comprising the steps of:
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preparing a substrate having a principal surface, the principal surface including a first area and a second area sequentially arranged along a waveguide axis; forming a stacked semiconductor layer on the principal surface of the substrate, the stacked semiconductor layer including an upper cladding layer, a first core layer, an intermediate cladding layer, and a second core layer; forming a waveguide mesa having a first portion and a second portion on the first area and the second area of the substrate, respectively, by etching the stacked semiconductor layer through a first mask, the first portion and the second portion including the upper cladding layer and the first core layer; forming a dummy buried region that embeds a top surface and side surfaces of the waveguide mesa; forming a second mask on the dummy buried region, the second mask having an opening on the first portion of the waveguide mesa and having a pattern on the second portion of the waveguide mesa; forming a third mask having an opening that reaches a top surface of the first portion of the waveguide mesa, the third mask including a dummy buried mask formed by etching the dummy buried region through the second mask; forming an upper mesa having a first upper mesa portion and a second upper mesa portion on the first area and the second area of the substrate, respectively, by etching the waveguide mesa through the third mask; and after removing the third mask, forming a lower mesa including the second core layer by etching the stacked semiconductor layer, the lower mesa having a greater width than a width of the upper mesa. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor optical waveguide device, comprising the steps of:
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preparing a substrate having a principal surface, the principal surface including a first area and a second area sequentially arranged along a waveguide axis; forming a stacked semiconductor layer on the principal surface of the substrate, the stacked semiconductor layer including an upper cladding layer, a first core layer, an intermediate cladding layer, and a second core layer; forming a waveguide mesa that has a first portion and a second portion on the first area and the second area of the substrate, respectively, by etching the stacked semiconductor layer through a first mask, the waveguide mesa including the upper cladding layer and the first core layer; forming a dummy buried region that embeds a top surface and side surfaces of the waveguide mesa; forming a second mask on the dummy buried region, the second mask having an opening on the first portion of the waveguide mesa and having a pattern on the second portion of the waveguide mesa; forming a dummy buried mask having an opening that reaches a top surface of the first portion of the waveguide mesa by etching the dummy buried region through the second mask; forming an upper mesa having a first upper mesa portion and a second upper mesa portion on the first area and the second area of the substrate, respectively, by etching the waveguide mesa through the dummy buried mask; and after removing the dummy buried mask, forming a lower mesa including the second core layer by etching the stacked semiconductor layer, the lower mesa having a greater width than a width of the upper mesa, wherein the second core layer, the intermediate cladding layer, the first core layer, and the upper cladding layer of the stacked semiconductor layer are sequentially disposed on the second area of the principal surface of the substrate. - View Dependent Claims (9, 10)
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11. A semiconductor optical waveguide device comprising:
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a substrate having a principal surface, the principal surface including a first area and a second area arranged along a waveguide axis; an upper mesa including a first upper mesa portion and a second upper mesa portion on the first area and the second area, respectively, the upper mesa including a first core layer; and a lower mesa between the substrate and the upper mesa, the lower mesa including a second core layer, the lower mesa having a larger width than a width of the upper mesa, the lower mesa having an end surface configured to be optically coupled to an external optical waveguide, wherein the first core layer of the upper mesa and the second core layer of the lower mesa on the second area are optically coupled through an intermediate cladding layer disposed between the first core layer and the second core layer, the upper mesa includes an upper cladding layer on the first core layer on the second area and includes no upper cladding layer on the first core layer on the first area, and the first core layer of the upper mesa on the first area includes a portion that has a smaller width than a width of the first core layer on the second area and a portion that has the same width as the first core layer on the second area. - View Dependent Claims (12)
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Specification