Photoelectric sensor and photoelectric touch panel
First Claim
1. A photoelectric sensor, comprising:
- a first thin film transistor (T1) for converting a photo signal into an electrical signal;
a second thin film transistor (T2) for performing an integration operation on the electrical signal;
a third thin film transistor (T3) for reading the electrical signal; and
a first capacitor (C1) for storing an energy of the electrical signal,wherein a drain electrode of the first thin film transistor (T1) is directly connected to one end of the first capacitor (C1) and a source electrode of the third thin film transistor (T3);
a source electrode of the first thin film transistor (T1) is directly connected to a drain electrode of the second thin film transistor (T2);
a gate electrode of the first thin film transistor (T1) is supplied with a bias signal;
wherein a gate electrode of the second thin film transistor (T2) is supplied with an integration signal;
a source electrode of the second thin film transistor (T2) is directly connected to a high level end of a power source;
the other end of the first capacitor (C1) is directly connected to a low level end of the power source; and
wherein a gate electrode of the third thin film transistor (T3) is supplied with a scan signal;
a drain electrode of the third thin film transistor (T3) is configured to output the read electrical signal.
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Accused Products
Abstract
A photoelectric sensor, comprising: a first thin film transistor (T1) for converting a photo signal into an electrical signal; a second thin film transistor (T2) for performing an integration operation on the electrical signal; a third thin film transistor (T3) for reading the electrical signal; and a first capacitor (C1) for storing an energy of the electrical signal, wherein a drain electrode of the first thin film transistor (T1) is connected to one end of the first capacitor (C1) and a source electrode of the third thin film transistor (T3); a source electrode of the first thin film transistor (T1) is connected to a drain electrode of the second thin film transistor (T2); a gate electrode of the first thin film transistor (T1) is supplied with a bias signal; wherein a gate electrode of the second thin film transistor (T2) is supplied with an integration signal; a source electrode of the second thin film transistor (T2) is connected to a high level end of a power source; the other end of the first capacitor (C1) is connected to a low level end of the power source; and wherein a gate electrode of the third thin film transistor (T3) is supplied with a scan signal; a drain electrode of the third thin film transistor (T3) is configured to output the read electrical signal.
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Citations
7 Claims
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1. A photoelectric sensor, comprising:
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a first thin film transistor (T1) for converting a photo signal into an electrical signal; a second thin film transistor (T2) for performing an integration operation on the electrical signal; a third thin film transistor (T3) for reading the electrical signal; and a first capacitor (C1) for storing an energy of the electrical signal, wherein a drain electrode of the first thin film transistor (T1) is directly connected to one end of the first capacitor (C1) and a source electrode of the third thin film transistor (T3);
a source electrode of the first thin film transistor (T1) is directly connected to a drain electrode of the second thin film transistor (T2);
a gate electrode of the first thin film transistor (T1) is supplied with a bias signal;wherein a gate electrode of the second thin film transistor (T2) is supplied with an integration signal;
a source electrode of the second thin film transistor (T2) is directly connected to a high level end of a power source;
the other end of the first capacitor (C1) is directly connected to a low level end of the power source; andwherein a gate electrode of the third thin film transistor (T3) is supplied with a scan signal; a drain electrode of the third thin film transistor (T3) is configured to output the read electrical signal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification