Crashworthy memory module having a crack repair system

• US 9,263,358 B2
• Filed: 07/15/2014
• Issued: 02/16/2016
• Est. Priority Date: 07/15/2014
• Status: Active Grant

• Current Assignee: Progress Rail Services Corporation (Caterpillar Incorporated)
• Original Assignee: Progress Rail Services Corporation (Caterpillar Incorporated)
• Inventors: Bartonek, Mark Joseph
• Primary Examiner(s): Schoenholtz, Joseph
• Application Number:
  US14/331,779
• Publication Number:
  US 20160018858A1
• Time in Patent Office: 581 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/18 Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 5/021 specially adapted for data recorders, e.g. for flight recorders
• CPC Class Codes: H05K 5/0213 Venting apertures; Constructional details thereof
• CPC Class Codes: H05K 5/062 sealed by a material injected between a non-removable cover and a body, e.g. hardening in situ

Abstract

A memory module is disclosed. The memory module may have an insulator. The memory module may also have a device disposed within the insulator. The memory module may further have a filler disposed on the device. The filler may be configured to expand and flow into one or more cracks in the insulator, when the filler is subjected to a threshold temperature.

Claims

1. A memory module, comprising:

an insulator;

a device disposed within the insulator; and

a filler disposed on the device and configured to expand and flow into one or more cracks in the insulator, when the filler is subjected to a threshold temperature.

2. The memory module of claim 1, wherein the filler is wrapped around the device.

3. The memory module of claim 2, wherein the device is disposed in an enclosure in the insulator and the filler has a thickness substantially equal to a width of a gap between the device and walls of the enclosure.

4. The memory module of claim 3, wherein the filler occupies about 30% to 50% of the enclosure.

5. The memory module of claim 1, wherein the insulator includes:

a top portion having an upper recess; and

a bottom portion including;

a lower recess; and

a protrusion configured to slidably engage the upper recess.

6. The memory module of claim 5, wherein

a first filler portion is disposed in the upper recess,

a second filler portion is disposed in the lower recess, and

the device is disposed between the first filler portion and the second filler portion.

7. The memory module of claim 1, wherein the filler is a thermal clay.

8. The memory module of claim 1, wherein the threshold temperature ranges from about 250°

F. to 370°

F.

9. The memory module of claim 1, wherein the filler has a thermal conductivity of about 0.5 to 2 W/mK.

10. A crack repair system for a device disposed within an insulator, comprising:

a gap extending from an outer surface of the device to one or more walls of the insulator; and

a filler disposed in the gap, the filler being configured to expand and flow into one or more cracks in the one or more walls, when subjected to a threshold temperature.

11. The crack repair system of claim 10, wherein:

the device is disposed in an enclosure in the insulator;

the filler is wrapped around the device; and

the device and the filler occupy about 50% to 80% of a volume of the enclosure.

12. The crack repair system of claim 10, wherein:

a first filler portion is disposed on a first side of the device; and

a second filler portion is disposed on a second side of the device opposite the first side.

13. The crack repair system of claim 10, wherein the threshold temperature is about 250°

F. to 370°

F.

14. A method of manufacturing a memory module, comprising:

fabricating an insulator having an enclosure;

disposing a filler on a device;

assembling the device in the enclosure, such that when the filler is subjected to a threshold temperature, the filler is configured to expand and flow into one or more cracks in the enclosure.

15. The method of manufacturing of claim 14, wherein fabricating the insulator further includes:

fabricating a top portion of the insulator; and

fabricating a bottom portion of the insulator.

16. The method of manufacturing of claim 15, wherein fabricating the top portion further includes:

fabricating an outer upper recess in the top portion; and

fabricating an inner upper recess in the top portion.

17. The method of manufacturing of claim 16, wherein fabricating the bottom portion further includes:

fabricating a protrusion in the bottom portion; and

fabricating a lower recess in the protrusion.

18. The method of manufacturing of claim 17, further including:

placing a first filler portion in the inner upper recess;

placing a second filler portion in the lower recess;

placing the device on the second filler portion; and

sliding the protrusion into the outer upper recess.

19. The method of manufacturing of claim 14, wherein disposing the filler further includes:

wrapping a first strip of the filler around a width of the device; and

wrapping a second strip of the filler around a length of the device.

20. The method of manufacturing of claim 19, further including:

placing the insulator in a housing base; and

assembling a lid to the housing base.