Through substrate via structures and methods of forming the same

• US 9,263,382 B2
• Filed: 07/17/2014
• Issued: 02/16/2016
• Est. Priority Date: 10/13/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yang, Ku-Feng, Chen, Yi-Hsiu, Liao, Ebin, Liu, Yuan-Hung, Chiou, Wen-Chih, Wu, Tsang-Jiuh
• Primary Examiner(s): Lee, Cheung
• Assistant Examiner(s): BRADLEY, STEPHEN M
• Application Number:
  US14/334,100
• Publication Number:
  US 20140327151A1
• Time in Patent Office: 579 Days
• Field of Search: 257/686, 257/774, 257/777, 257/E21.011, 438637-640
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05006 Dual damascene structure
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05546 Dual damascene structure
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section.

Claims

1. A structure comprising:

a substrate;

an interconnect structure over the substrate;

a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer;

a metal layer over the interconnect structure, wherein a top surface of the metal layer is substantially level with a top surface of the TSV; and

a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material,

wherein the conductive material layer comprises;

a first section separated from substrate by the second portion of the dielectric layer,

a second section over a top surface of the second portion of the dielectric layer, and

a third section over the second section, wherein the third section has a width greater than a width of the second section.

2. The structure of claim 1, wherein the top surface of the second portion of the dielectric layer is spaced from a top surface of the interconnect structure by a distance ranging from about 2,000 angstroms to about 20,000 angstroms.

3. The structure of claim 1, wherein the metal layer is spaced from the TSV.

4. The structure of claim 3, wherein the metal layer is within the first portion of the dielectric layer.

5. The structure of claim 1, further comprising an isolation structure in the substrate, wherein the TSV extends through the isolation structure.

6. The structure of claim 5, wherein the second portion of the dielectric layer is between the isolation structure and the first segment of the conductive material layer.

7. The structure of claim 5, wherein a bottom portion of the second portion of the dielectric layer is farther from a top surface of the substrate than a bottom portion of the isolation structure.

8. A structure comprising:

a substrate;

an isolation structure in the substrate;

a through-substrate-via (TSV) extending through the isolation structure and into the substrate, wherein a bottom surface of the TSV is below a bottom surface of the isolation structure;

a dielectric layer having a first portion over the substrate and a second portion within the TSV, wherein the first portion and the second portion comprise a same material, a top surface of the second portion is above the isolation structure, and the second portion of the dielectric layer contacts the isolation structure, and

wherein the TSV extends over the top surface of the second portion of the dielectric layer.

9. The structure of claim 8, wherein a bottom surface of the second portion of the dielectric layer is below the bottom surface of the isolation structure.

10. The structure of claim 8, wherein the second portion of the dielectric layer is between the TSV and the isolation structure.

11. The structure of claim 8, wherein the TSV comprises a conductive material layer and a barrier layer between the conductive material layer and the substrate.

12. The structure of claim 11, wherein the barrier layer is between the conductive material layer and the second portion of the dielectric layer.

13. The structure of claim 11, further comprising a metal layer separated from the TSV, wherein a bottom surface of the metal layer is above the top surface of the second portion of the dielectric layer.

14. The structure of claim 13, wherein the metal layer comprises:

a conductive material, wherein a material of the conductive material is a same material as the conductive material layer, and

a barrier layer surrounding the conductive material, wherein a material of the barrier layer of the metal layer is a same material as the barrier layer of the TSV.

15. A method of forming a structure, the method comprising:

forming a through-substrate-via (TSV) opening in a substrate, wherein the substrate comprises an isolation structure, and the TSV opening extends through the isolation structure;

depositing a dielectric layer on the substrate, wherein the dielectric layer lines the TSV opening,

patterning and etching the dielectric layer to form a wider opening at one end of the TSV opening in a first portion of the dielectric layer, and to define a second portion of the dielectric layer in the TSV opening,

filling the TSV opening with a conductive material layer, wherein the conductive material layer in the TSV opening extends over a top surface of the second portion of the dielectric layer closest to the first portion of the dielectric layer; and

removing the conductive material layer outside the wider opening, wherein removing the conductive material outside the wider opening comprises maintaining the first portion of the dielectric layer.

16. The method of claim 15, wherein filling the TSV opening with the conductive material layer comprises forming:

a first segment of the conductive material layer separated from the substrate by the second portion of the dielectric layer;

a second segment of the conductive material layer over the top surface of the second portion of the dielectric layer closest to the first portion of the dielectric layer; and

a third segment of the conductive material layer over the second segment of the conductive material layer, wherein a width of the third segment is greater than a width of the second segment.

17. The method of claim 15, wherein patterning and etching the dielectric layer comprises completely removing the dielectric layer from sidewalls of the TSV opening between the first portion and the second portion.

18. The method of claim 15, further comprising forming a metal layer over the substrate, wherein the metal layer is in the first portion of the dielectric layer.

19. The method of claim 18, wherein forming the metal layer comprises forming a bottom surface of the metal layer above the top surface of the second portion of the dielectric layer closest to the first portion of the dielectric layer.

20. The method of claim 15, wherein depositing the dielectric layer comprises forming a bottom surface of the dielectric layer below a bottom surface of the isolation structure.