Semiconductor device and method for manufacturing semiconductor device

• US 9,263,472 B2
• Filed: 04/03/2014
• Issued: 02/16/2016
• Est. Priority Date: 07/18/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Miyake, Hiroyuki, Kuwabara, Hideaki, Takahashi, Tatsuya
• Primary Examiner(s): ULLAH, ELIAS
• Application Number:
  US14/244,440
• Publication Number:
  US 20140293183A1
• Time in Patent Office: 684 Days
• Field of Search: 257/57, 257/71, 257/43, 257/E21.46, 257/E29.296
• US Class Current: 1/1
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/78645 with multiple gate

Abstract

An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Claims

1. An electronic device comprising:

a band portion; and

a display portion comprising;

a pixel portion comprising;

a first gate electrode layer;

a first oxide semiconductor layer over the first gate electrode layer; and

a pixel electrode layer over the first oxide semiconductor layer, the pixel electrode layer being electrically connected to the first oxide semiconductor layer; and

a driver circuit comprising;

a second gate electrode layer and a third gate electrode layer overlapping each other; and

a second oxide semiconductor layer between the second gate electrode layer and the third gate electrode layer.

2. The electronic device according to claim 1, further comprising:

a source electrode layer over the second oxide semiconductor layer;

a drain electrode layer over the second oxide semiconductor layer; and

an insulating layer over the source electrode layer and the drain electrode layer, the insulating layer being in contact with the second oxide semiconductor layer between the source electrode layer and the drain electrode layer.

3. The electronic device according to claim 1, wherein a fixed potential is applied to the third gate electrode layer.

4. The electronic device according to claim 1, wherein a ground potential is applied to the third gate electrode layer.

5. The electronic device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Ga, Zn and O.

6. The electronic device according to claim 1, wherein the pixel portion comprises an electroluminescence element.

7. The electronic device according to claim 1, wherein the pixel portion comprises a liquid crystal element.

8. The electronic device according to claim 1, further comprising a battery and a communication device.

9. The electronic device according to claim 1, further comprising a battery and a camera portion.

10. An electronic device comprising:

a band portion; and

a display portion comprising;

a gate electrode layer of a transistor of a pixel portion over a substrate;

a first gate electrode layer of a transistor of a driver circuit over the substrate;

a gate insulating layer over the gate electrode layer of the transistor of the pixel portion and the first gate electrode layer of the transistor of the driver circuit;

a first oxide semiconductor layer over the gate insulating layer, the first oxide semiconductor layer overlapping the gate electrode layer of the transistor of the pixel portion;

a second oxide semiconductor layer over the gate insulating layer, the second oxide semiconductor layer overlapping the first gate electrode layer of the transistor of the driver circuit;

an insulating layer over the first oxide semiconductor layer and the second oxide semiconductor layer;

a second gate electrode layer of the transistor of the driver circuit over the insulating layer, the second gate electrode layer overlapping the second oxide semiconductor layer; and

a pixel electrode layer over the insulating layer, the pixel electrode layer being electrically connected to the first oxide semiconductor layer,

wherein the second gate electrode layer and the pixel electrode layer do not overlap each other, and

wherein the pixel electrode layer is configured to transmit light.

11. The electronic device according to claim 10, further comprising:

a first source electrode layer over the first oxide semiconductor layer;

a first drain electrode layer over the first oxide semiconductor layer;

a second source electrode layer over the second oxide semiconductor layer; and

a second drain electrode layer over the second oxide semiconductor layer,

wherein the insulating layer is over the first source electrode layer, the second source electrode layer, the first drain electrode layer and the second drain electrode layer,

wherein the insulating layer is in contact with the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer, and

wherein the insulating layer is in contact with the second oxide semiconductor layer between the second source electrode layer and the second drain electrode layer.

12. The electronic device according to claim 10, wherein a fixed potential is applied to the second gate electrode layer.

13. The electronic device according to claim 10, wherein a ground potential is applied to the second gate electrode layer.

14. The electronic device according to claim 10, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Ga, Zn and O.

15. The electronic device according to claim 10, further comprising an electroluminescence element.

16. The electronic device according to claim 10, further comprising a liquid crystal element.

17. The electronic device according to claim 10, further comprising a battery and a communication device.

18. The electronic device according to claim 10, further comprising a battery and a camera portion.