Method of fabricating a gate dielectric layer
First Claim
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1. A method of making a semiconductor device, the method comprising:
- forming an active region in a substrate;
forming a first gate structure over the active region, wherein forming the first gate structure comprises;
forming a first interfacial layer, wherein forming the first interfacial layer comprises;
depositing the first interfacial layer having a concave top surface; and
performing a plasma treatment on the first interfacial layer to change the concave top surface into a curved convex surface;
forming a first high-k dielectric over the first interfacial layer; and
forming a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric.
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Abstract
A method of making a semiconductor device, the method includes forming an active region in a substrate. The method further includes forming a first gate structure over the active region, where the forming the first gate structure includes forming a first interfacial layer. An entirety of a top surface of the first interfacial layer is a curved convex surface. Furthermore, the method includes forming a first high-k dielectric over the first interfacial layer. Additionally, the method includes forming a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric.
14 Citations
19 Claims
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1. A method of making a semiconductor device, the method comprising:
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forming an active region in a substrate; forming a first gate structure over the active region, wherein forming the first gate structure comprises; forming a first interfacial layer, wherein forming the first interfacial layer comprises; depositing the first interfacial layer having a concave top surface; and performing a plasma treatment on the first interfacial layer to change the concave top surface into a curved convex surface; forming a first high-k dielectric over the first interfacial layer; and forming a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, the method comprising:
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forming an active region in a substrate; and depositing a gate structure over the active region, wherein forming the gate structure comprises; depositing a first interfacial layer, wherein the first interfacial layer is deposited having a concave top surface; depositing a high-k dielectric over the first interfacial layer; performing a plasma treatment on the first interfacial layer and the high-k dielectric layer, wherein, following the plasma treatment, an entirety of the top surface of the first interfacial layer is a curved convex surface; and depositing a gate electrode over a first portion of the high-k dielectric and surrounded by a second portion of the high-k dielectric. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for fabricating a gate dielectric layer, comprising:
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forming an interfacial layer over a substrate, wherein the interfacial layer has a concave top surface; forming a high-k dielectric on the interfacial layer; and performing a fluorine-containing plasma treatment on the high-k dielectric and interfacial layer, wherein, following the plasma treatment, an entirety of the top surface of the first interfacial layer is a curved convex surface. - View Dependent Claims (16, 17, 18, 19)
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Specification