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Method for making light emitting diodes

  • US 9,263,628 B2
  • Filed: 04/29/2015
  • Issued: 02/16/2016
  • Est. Priority Date: 03/30/2012
  • Status: Active Grant
First Claim
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1. A method for making a light emitting diode, comprising the following steps:

  • providing a substrate having a first surface;

    forming a first semiconductor pre-layer on the first surface of the substrate;

    forming a plurality of first three-dimensional structures on a first semiconductor pre-layer surface at a distance away from the substrate, to form a first semiconductor layer;

    forming an active layer and a second semiconductor pre-layer on the first semiconductor layer in order;

    applying a patterned mask layer on a second semiconductor pre-layer surface, wherein the patterned mask layer comprises a plurality of linear walls aligned side by side, and a groove is defined between each adjacent linear walls to form an exposed portion of the second semiconductor pre-layer surface;

    etching the exposed portion and removing the patterned mask layer to form a second plurality of three-dimensional structures, wherein the second plurality of three-dimensional structures are linear protruding structures, and a cross-section of each linear protruding structure is an arc;

    removing the substrate to form an exposed first semiconductor layer surface located away from the active layer;

    covering the exposed first semiconductor layer surface by a first electrode; and

    electrically connecting a second electrode with the second semiconductor pre-layer.

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