III nitride semiconductor light emitting device and method for manufacturing the same

• US 9,263,642 B2
• Filed: 09/30/2011
• Issued: 02/16/2016
• Est. Priority Date: 09/30/2010
• Status: Active Grant

• Current Assignee: Dowa Electronics Materials Co. Ltd. (DOWA Holdings Company Limited)
• Original Assignee: Dowa Electronics Materials Co. Ltd. (DOWA Holdings Company Limited)
• Inventors: Toyota, Tatsunori, Shibata, Tomohiko
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): ASSOUMAN, HERVE-LOUIS Y
• Application Number:
  US13/825,888
• Publication Number:
  US 20130193471A1
• Time in Patent Office: 1,600 Days
• Field of Search: 257/91, 257 98- 99, 438/29, 438/39, 438/42, 438/46
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of Al_xGa_1-xN (0≦x≦0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.

Claims

1. A III nitride semiconductor light emitting device comprising:

a III nitride semiconductor laminate including a light emitting layer, and a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer having a conductivity type different from the first conductivity type, the light emitting layer being sandwiched between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and

a first electrode and a second electrode formed on the first conductivity-type semiconductor layer side and the second conductivity-type semiconductor layer side of the III nitride semiconductor laminate, respectively, wherein

a composite layer having a reflective electrode portion and a contact portion made of Al_xGa_1-xN (0≦

x≦

0.05) is provided on a second surface of the III nitride semiconductor laminate, the second surface being opposite to a first surface on the light extraction side,

the contact portion is thicker than the reflective electrode portion,

the second electrode is located at the second surface side, and directly contacts the reflective electrode portion and the contact portion, and

the reflective electrode portion and the contact portion are located directly on the second surface.

2. The III nitride semiconductor light emitting device according to claim 1, wherein in the composite layer,

at least one of the reflective electrode portion and the contact portion is provided to form a plurality of island-shaped regions on the second surface, and

the other of reflective electrode portion and the contact portion is provided to be positioned at least between the plurality of the island-shaped regions.

3. The III nitride semiconductor light emitting device according to claim 1, wherein the semiconductor layer having the second surface is p-type, and

the reflective electrode portion is made of one of Rh, Pt, Ir, Ru, and Mo or an alloy containing any of these.

4. The III nitride semiconductor light emitting device according to claim 1, wherein the second surface of the III nitride semiconductor laminate is a part of a semiconductor layer made of Al_xGa_1-xN (0≦

x≦

0.05) with a thickness of 5 nm or less.

5. The III nitride semiconductor light emitting device according to claim 1, wherein the contact portion is formed to cover the reflective electrode portion.

9. The III nitride semiconductor light emitting device according to claim 1, wherein the composite layer continuously contacts the second surface.

10. The III nitride semiconductor light emitting device according to claim 1, wherein a ratio of a first region in which the reflective electrode portion is formed in the composite layer to a second region in which the contact portion is formed in the composite layer is 0.1 to 10.

11. The III nitride semiconductor light emitting device according to claim 1, wherein the contact portion protrudes into the second electrode.

6. A method for manufacturing a III nitride semiconductor light emitting device, comprising the steps of:

forming a buffer layer on a substrate;

forming a III nitride semiconductor laminate by sequentially forming a first conductivity-type semiconductor layer, a light emitting layer, and a second conductivity-type semiconductor layer having a conductivity type different from the first conductivity type, on the buffer layer;

forming a reflective electrode portion directly on a first region of a surface of the III nitride semiconductor laminate on the second conductivity-type semiconductor layer side;

forming a contact portion made of Al_xGa_1-xN (0≦

x≦

0.05) at least directly on a second region other than the first region, wherein the contact portion is thicker than the reflective electrode portion; and

forming a first electrode and a second electrode on the III nitride semiconductor laminate on the first conductivity-type semiconductor layer side and the second conductivity-type semiconductor layer side, respectively, the second electrode directly contacting the reflective electrode portion and the contact portion.

7. The method for manufacturing a III nitride semiconductor light emitting device according to claim 6, further comprising a step of forming a semiconductor layer made of Al_xGa_1-xGa_1-xN (0≦

x≦

0.05) to a thickness of 5 nm or less on a surface of the III nitride semiconductor laminate, on which the reflective electrode portion and the contact portion are formed.

8. The method for manufacturing a III nitride semiconductor light emitting device according to claim 6, further comprising the steps of:

providing a protective layer on the reflective electrode portion after the step of forming the reflective electrode portion;

then forming the contact layer, and

then removing the protective layer.

12. The method for manufacturing a III nitride semiconductor light emitting device according to claim 6, wherein a ratio of the first region on to the second region is 0.1 to 10.

13. The method for manufacturing a III nitride semiconductor light emitting device according to claim 6, wherein the contact portion is formed to protrude into the second electrode relative to the reflective electrode portion.