Method for manufacturing MTJ memory device

• US 9,263,667 B1
• Filed: 07/25/2014
• Issued: 02/16/2016
• Est. Priority Date: 07/25/2014
• Status: Active Grant

• Current Assignee: Integrated Silicon Solution Incorporated (Uphill Investment Co.)
• Original Assignee: Spin Transfer Technologies, Inc.
• Inventors: Pinarbasi, Mustafa
• Primary Examiner(s): Valentine, Jami M
• Application Number:
  US14/341,185
• Publication Number:
  US 20160027999A1
• Time in Patent Office: 571 Days
• Field of Search: 257421-427, 257/E29.323, 438/3
• US Class Current: 1/1
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A method for manufacturing MTJ pillars for a MTJ memory device. The method includes depositing multiple MTJ layers on a substrate, depositing a hard mask on the substrate and coating a photoresist on the hard mask. Further, alternating steps of reactive ion etching and ion beam etching are performed to isolate MTJ pillars and expose side surfaces of the MTJ layers. An insulating layer is the applied to protect the side surfaces of the MTJ layers. A second insulating layer is deposited before the device is planarized using chemical mechanical polishing.

Claims

1. A method of manufacturing a magnetic tunnel junction (“

MTJ”

) device, the method comprising;

depositing a plurality of MTJ layers on a substrate wafer, the plurality of MTJ layers including a reference layer, a barrier layer disposed on the reference layer and a free layer disposed on the barrier layer;

depositing a hard mask above the plurality of MTJ layers;

forming a first photoresist layer on a portion of the hard mask;

etching the hard mask and the plurality of MTJ layers to form an MTJ pillar under the first photoresist layer, wherein the free layer and barrier layer are etched to expose side surfaces of the free layer and the barrier layer and a surface of the reference layer adjacent to the MTJ structure;

depositing a first insulating layer on the MTJ pillar, on the exposed side surfaces of the free layer and the barrier layer, and on the exposed surface of the reference layer;

ion beam etching the MTJ pillar to remove a portion of the first insulating layer that is disposed on horizontal surfaces of the MTJ pillar and the exposed surface of the reference layer;

etching the MTJ layers to the substrate wafer to electrically isolate the MTJ pillar from adjacent MTJ pillars;

and

planarizing the substrate wafer,

wherein the step of etching the MTJ layers includes at least one reactive ion etching and at least one ion beam etching.

2. The method of manufacturing according to claim 1, wherein the step of depositing a plurality of MTJ layers further comprises:

depositing a tantalum nitride capping layer on the free layer; and

depositing a perpendicular polarizer on the tantalum nitride capping layer.

3. The method of manufacturing according to claim 2, wherein the step of etching the MTJ layers further comprises:

reactive ion etching the hard mask;

ion beam etching the perpendicular polarizer;

reactive ion etching the tantalum nitride capping layer; and

ion beam etching the free layer and barrier layer.

4. The method of manufacturing according to claim 3, wherein the free layer comprises a CoFeB thin film, which serves as an etch stop for the reactive ion etching of the tantalum nitride capping layer.

5. The method of manufacturing according to claim 3, wherein after the step of ion beam etching the perpendicular polarizer, a third insulating layer is conformally deposited on the MTJ pillar.

6. The method of manufacturing according to claim 5, further comprising etching the MTJ pillar to remove a portion of the third insulating layer that is disposed on horizontal surfaces of the MTJ structure.

7. The method of manufacturing according to claim 1, wherein the step of ion beam etching the MTJ pillar comprises applying ion beams at a normal angle relative to the substrate wafer.

8. The method of manufacturing according to claim 1, further comprising conformally depositing a second insulating layer on the MTJ pillar after the step of ion beam etching the MTJ pillar.

9. The method of manufacturing according to claim 1, wherein the barrier layer comprises an oxide of magnesium.

10. The method of manufacturing according to claim 3, further comprising stopping the ion beam etching of the barrier layer using secondary ion mass spectroscopy end point detection.

11. The method of manufacturing according to claim 1, further comprising forming a second photoresist layer on the first insulating layer on the MTJ pillar before the step of ion beam etching the MTJ pillar.

12. The method of manufacturing according to claim 11, wherein the second photoresist layer has a width over the MTJ pillar that is larger than a width of the first photoresist layer.

13. A method of manufacturing a magnetic tunnel junction (“

MTJ”

) device, the method comprising;

depositing at least one lower layer on a substrate wafer;

depositing an anti-ferromagnetic layer on the at least one lower layer;

depositing a synthetic antiferromagnetic structure on the anti-ferromagnetic layer, the synthetic antiferromagnetic structure including a reference layer;

depositing a barrier layer on the reference layer;

depositing a free layer on the barrier layer;

depositing a tantalum nitride capping layer on the free layer;

depositing at least one upper layer on the tantalum nitride capping layer;

depositing a hard mask on the at least one upper layer;

forming a first photoresist layer on a portion of the hard mask;

reactive ion etching the hard mask;

ion beam etching the at least one upper layer;

reactive ion etching the tantalum nitride capping layer;

ion beam etching the free layer and barrier layer to expose side surfaces of the free layer and barrier layer and a surface of the reference layer adjacent to the side surfaces of the barrier layer;

depositing a first insulating layer on the MTJ pillar, on the exposed side surfaces of the free layer and the barrier layer, and on the exposed surface of the reference layer;

ion beam etching at an angle normal relative to the substrate wafer to isolate at least one MTJ pillar;

depositing a second insulating layer; and

planarizing the substrate wafer.

14. The method of manufacturing according to claim 13, further comprising conformally depositing a third insulating layer after the step of ion beam etching the at least one upper layer.

15. The method of manufacturing according to claim 14, further comprising a further step of reactive ion etching to remove horizontal surfaces of the third insulating layer.

16. The method of manufacturing according to claim 15, further comprising coating a second photoresist layer on the first insulating layer on the MTJ pillar before the step of ion beam etching the MTJ pillar.

17. The method of manufacturing according to claim 16, wherein the second photoresist layer has a width over the MTJ pillar that is larger than a width of the first photoresist layer.

18. A method of manufacturing a magnetic tunnel junction (“

MTJ”

) device, the method comprising;

depositing a plurality of MTJ layers on a substrate wafer, the plurality of MTJ layers including a reference layer, a barrier layer disposed on the reference layer and a free layer disposed on the barrier layer;

depositing a hard mask above the plurality of MTJ layers;

forming a first photoresist layer on a portion of the hard mask;

etching the hard mask and the plurality of MTJ layers to form an MTJ pillar under the first photoresist layer, wherein the free layer and barrier layer are etched to expose side surfaces of the free layer and barrier layer and a surface of the reference layer adjacent to the MTJ pillar;

depositing a first insulating layer on the MTJ pillar, on the exposed side surfaces of the free layer and the barrier layer, and on the exposed surface of the reference layer;

forming a second photoresist layer on the first insulating layer on the MTJ pillar and a portion of the exposed surface of the reference layer;

ion beam etching at an angle normal relative to the substrate wafer to isolate the MTJ pillar;

depositing a second insulating layer; and

planarizing the substrate wafer.

19. The method of manufacturing according to claim 18, wherein the second photoresist layer has a width over the MTJ pillar that is larger than a width of the first photoresist layer.

20. A method of manufacturing a magnetic tunnel junction (“

MTJ”

) device for a read head application, the method comprising;

depositing a plurality of MTJ layers on a substrate wafer, the plurality of MTJ layers including a reference layer, a barrier layer disposed on the reference layer and a free layer disposed on the barrier layer;

depositing a hard mask above the plurality of MTJ layers;

forming a first photoresist layer on a portion of the hard mask;

etching the hard mask and the plurality of MTJ layers to form an MTJ pillar under the first photoresist layer, wherein the free layer and barrier layer are etched to expose side surfaces of the free layer and barrier layer and a surface of the reference layer adjacent to the MTJ structure;

depositing a first insulating layer on the MTJ pillar, on the exposed side surfaces of the free layer and the barrier layer, and on the exposed surface of the reference layer;

ion beam etching the MTJ pillar to remove a portion of the first insulating layer that is disposed on horizontal surfaces of the MTJ pillar and the exposed surface of the reference layer;

depositing a second insulating layer on the MTJ pillar;

depositing a stabilizing magnetic layer on the second insulating layer;

and

planarizing the substrate wafer,

wherein the etching step includes at least one reactive ion etching and at least one ion beam etching.