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Method for manufacturing MTJ memory device

  • US 9,263,667 B1
  • Filed: 07/25/2014
  • Issued: 02/16/2016
  • Est. Priority Date: 07/25/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a magnetic tunnel junction (“

  • MTJ”

    ) device, the method comprising;

    depositing a plurality of MTJ layers on a substrate wafer, the plurality of MTJ layers including a reference layer, a barrier layer disposed on the reference layer and a free layer disposed on the barrier layer;

    depositing a hard mask above the plurality of MTJ layers;

    forming a first photoresist layer on a portion of the hard mask;

    etching the hard mask and the plurality of MTJ layers to form an MTJ pillar under the first photoresist layer, wherein the free layer and barrier layer are etched to expose side surfaces of the free layer and the barrier layer and a surface of the reference layer adjacent to the MTJ structure;

    depositing a first insulating layer on the MTJ pillar, on the exposed side surfaces of the free layer and the barrier layer, and on the exposed surface of the reference layer;

    ion beam etching the MTJ pillar to remove a portion of the first insulating layer that is disposed on horizontal surfaces of the MTJ pillar and the exposed surface of the reference layer;

    etching the MTJ layers to the substrate wafer to electrically isolate the MTJ pillar from adjacent MTJ pillars;

    andplanarizing the substrate wafer,wherein the step of etching the MTJ layers includes at least one reactive ion etching and at least one ion beam etching.

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