Method for manufacturing sputtering target, method for forming oxide film, and transistor

• US 9,267,199 B2
• Filed: 02/24/2014
• Issued: 02/23/2016
• Est. Priority Date: 02/28/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Tsubuku, Masashi, Oota, Masashi, Kurosawa, Yoichi, Ishihara, Noritaka
• Primary Examiner(s): Kopec, Mark
• Assistant Examiner(s): Kang, Danny N
• Application Number:
  US14/187,960
• Publication Number:
  US 20140241978A1
• Time in Patent Office: 729 Days
• Field of Search: 423/594.14, 264/681, 204/192.1
• US Class Current: 1/1
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C01G 15/006 Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01P 2002/32 spinel-type (AB2O4)
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C01P 2002/85 by XPS, EDX or EDAX data
• CPC Class Codes: C01P 2004/04 obtained by TEM, STEM, STM or AFM
• CPC Class Codes: C01P 2004/61 Micrometer sized, i.e. from 1-100 micrometer
• CPC Class Codes: C01P 2004/62 Submicrometer sized, i.e. from 0.1-1 micrometer
• CPC Class Codes: C01P 2004/64 Nanometer sized, i.e. from 1-100 nanometer
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C30B 1/04 Isothermal recrystallisation
• CPC Class Codes: C30B 23/08 by condensing ionised vapours by reactive sputtering C30B25/06
• CPC Class Codes: C30B 28/02 directly from the solid state
• CPC Class Codes: C30B 29/22 Complex oxides
• CPC Class Codes: C30B 29/68 Crystals with laminate structure, e.g. "superlattices"
• CPC Class Codes: H01J 2237/081 Sputtering sources
• CPC Class Codes: H01J 2237/3322 Problems associated with coating
• CPC Class Codes: H01J 2237/3323 uniformity
• CPC Class Codes: H01J 37/3429 : Plural materials
• CPC Class Codes: H01L 21/02565 : Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02609 : Crystal orientation
• CPC Class Codes: H01L 21/02631 : Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/045 : by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 : including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 : of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Claims

1. A method for manufacturing a sputtering target, comprising the steps of:

forming a polycrystalline In-M-Zn oxide powder from a homologous compound of an In-M-Zn oxide, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium;

forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;

forming a compact by compacting the mixture; and

sintering the compact.

2. The method for manufacturing a sputtering target according to claim 1,

wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target.

3. The method for manufacturing a sputtering target according to claim 1,

wherein M represents gallium.

4. A method for manufacturing a sputtering target, comprising the steps of:

forming a polycrystalline In-M-Zn oxide powder, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium, by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide;

forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;

forming a compact by compacting the mixture; and

sintering the compact.

5. The method for manufacturing a sputtering target according to claim 4, wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target.

6. The method for manufacturing a sputtering target according to claim 4, wherein the polycrystalline In-M-Zn oxide powder is a homologous compound.

7. The method for manufacturing a sputtering target according to claim 4, wherein M represents gallium.