Pressure control valve assembly of plasma processing chamber and rapid alternating process

• US 9,267,605 B2
• Filed: 11/07/2011
• Issued: 02/23/2016
• Est. Priority Date: 11/07/2011
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Abatchev, Mirzafer, Rusu, Camelia, McMillin, Brian
• Primary Examiner(s): Nguyen, Khiem D
• Application Number:
  US13/290,657
• Publication Number:
  US 20130115776A1
• Time in Patent Office: 1,569 Days
• Field of Search: 438/701, 438/710, 438/758, 137/511, 137/629, 118/715, 118/723.I, 156/345.29, 156/345.48
• US Class Current: 1/1
• CPC Class Codes: F16K 3/0209 the valve having a particular passage, e.g. provided with a filter, throttle or safety device
• CPC Class Codes: H01J 37/32816 Pressure
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: Y10T 137/7837 Direct response valves [i.e., check valve type]

Abstract

A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a semiconductor substrate in the chamber. A fixed slotted valve plate having a first set of parallel slots therein is fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots. A movable slotted valve plate having a second set of parallel slots therein is movable with respect to the fixed slotted valve plate so as to adjust pressure in the chamber.

Claims

1. A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed, comprising:

a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during processing of a semiconductor substrate in the chamber;

a fixed slotted valve plate having a first set of parallel slots therein and immovably fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots;

a movable slotted valve plate in the conduit having a second set of parallel slots therein and movable to first and second positions with respect to the fixed slotted valve plate so as to partially block the first set of parallel slots in the first position to a greater extent than in the second position; and

a drive mechanism attached to the movable slotted valve plate and operable to rapidly move the movable slotted valve plate between the first and second positions to change pressure in the chamber from a higher pressure to a lower pressure or from a lower pressure to a higher pressure;

wherein the fixed and movable slotted valve plates are circular, the first and second sets of slots having uniform widths W and varying lengths, and wherein the first and second slots provide an open area of 10 to 20% through the fixed slotted valve plate and the movable valve plate when the movable valve plate is positioned in the first position and the first and second slots provide an open area of 25 to 50% through the fixed slotted valve plate and the movable valve plate when the movable valve plate is positioned in the second position.

2. The pressure control valve assembly of claim 1, wherein the drive mechanism includes a stepper motor which moves the movable slotted valve plate from the first position to the second position within 100 milliseconds.

3. The pressure control valve assembly of claim 1, wherein the slots on one half of the fixed and movable slotted valve plates are a mirror image of the slots on the other half thereof.

4. The pressure control valve assembly of claim 1, wherein the first and second sets of slots provide an open area of 30 to 50% through each of the fixed and movable slotted valve plates.

5. The pressure control valve assembly of claim 1, wherein the fixed and movable slotted valve plates have a radius R, and the uniform widths of the first and second sets of slots are about 0.1 R.

6. The pressure control valve assembly of claim 1, wherein the slots of the fixed and movable slotted valve plates are spaced apart by a distance D which is equal to or greater than the uniform width W thereof.

7. The pressure control valve assembly of claim 1, wherein the fixed slotted valve plate is closer to the inlet than the movable slotted valve plate.

8. The pressure control valve assembly of claim 2, wherein the stepper motor is a 500 count per second or faster stepper motor operable to move the movable slotted valve plate from the first position to the second position within 70 milliseconds.

9. The pressure control valve assembly of claim 1, wherein the fixed slotted valve plate includes 6 parallel slots providing an open area of 30 to 40%, and the movable slotted valve plate includes 5 parallel slots providing an open area of 30 to 40%, the first and second sets of slots being identical in width.

10. A method of processing a semiconductor substrate in a chamber having the pressure control valve assembly of claim 1 attached to an outlet of the chamber, comprising steps:

(a) adjusting chamber pressure from a lower pressure to a higher pressure by positioning the movable slotted valve plate in the first position while supplying a processing gas to the chamber and (b) adjusting chamber pressure from a higher pressure to a lower pressure by positioning the movable slotted valve plate in the second position while supplying the same or different process gas to the chamber.

11. The method of claim 10, wherein the processing comprises plasma etching openings in silicon using alternating steps of etching while supplying an etching gas to the chamber and deposition while supplying a deposition gas to the chamber, the etching gas comprising a fluorine containing gas supplied for less than 1.3 seconds and energized into a plasma state while maintaining the first pressure above 150 mTorr and the deposition gas comprising a fluorocarbon containing gas supplied for less than 0.7 second and energized into a plasma state while maintaining the second pressure below 130 mTorr.

12. The method of claim 11, further comprising a polymer clearing step before the etching step, the polymer clearing step being carried out by supplying a polymer clearing gas for at least 200 milliseconds and energizing the polymer clearing gas into a plasma state while maintaining the chamber pressure below 150 mTorr.

13. The method of claim 10, wherein the processing comprises depositing a film on the substrate.

14. The method of claim 10, wherein rapid alternating of steps (a) and (b) is carried out for at least 100 cycles.

15. The method of claim 10, wherein the movable slotted valve plate is moved from the first position to the second position within 300 milliseconds.

16. The method of claim 10, wherein the chamber is an inductively coupled plasma chamber having a chamber volume of at least 60 liters and the processing comprises energizing etching gas into a plasma state and plasma etching the semiconductor substrate.

17. The method of claim 10, wherein the processing comprises a deposition process wherein chamber pressure is repeatedly varied while supplying the same or different process gas while the chamber is cycled between various set points.

18. The method of claim 10, further comprising positioning the movable valve plate to the first position to provide an open area of 10 to 20% through the respective first and second slots of the fixed slotted valve plate and the movable valve plate and positioning the movable valve plate to the second position to provide an open area of 25 to 50% through the respective first and second valve slots of the fixed slotted valve plate and movable valve plate.