Liquid crystal display device and semiconductor device
First Claim
Patent Images
1. A display device comprising:
- a first substrate;
a first conductive film on and in contact with the first substrate;
a first insulating film on and in contact with the first conductive film;
a semiconductor film comprising a channel region on and in contact with the first insulating film;
a gate insulating film over the semiconductor film;
a gate over the gate insulating film;
a second insulating film over the gate;
a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film;
a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film;
a third insulating film over the source wiring and the second conductive film;
a pixel electrode over the third insulating film and in contact with the second conductive film through a third contact hole in the third insulating film;
a common electrode below the pixel electrode with the third insulating film interposed therebetween;
an alignment film over the pixel electrode and the common electrode;
a liquid crystal over the alignment film; and
a second substrate over the liquid crystal,wherein the first conductive film is in a floating state,wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween,wherein the first insulating film is a silicon oxide film,wherein the semiconductor film is a polysilicon film,wherein the gate and the common electrode are overlapped with each other,wherein the source wiring and the first conductive film are overlapped with each other,wherein the first conductive film and the second conductive film are overlapped with each other,wherein the third contact hole does not overlap the common electrode,wherein the pixel electrode has comb-shaped portions, andwherein a space is located between the comb-shaped portions of the pixel electrode.
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Abstract
By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.
185 Citations
34 Claims
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1. A display device comprising:
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a first substrate; a first conductive film on and in contact with the first substrate; a first insulating film on and in contact with the first conductive film; a semiconductor film comprising a channel region on and in contact with the first insulating film; a gate insulating film over the semiconductor film; a gate over the gate insulating film; a second insulating film over the gate; a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film; a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film; a third insulating film over the source wiring and the second conductive film; a pixel electrode over the third insulating film and in contact with the second conductive film through a third contact hole in the third insulating film; a common electrode below the pixel electrode with the third insulating film interposed therebetween; an alignment film over the pixel electrode and the common electrode; a liquid crystal over the alignment film; and a second substrate over the liquid crystal, wherein the first conductive film is in a floating state, wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween, wherein the first insulating film is a silicon oxide film, wherein the semiconductor film is a polysilicon film, wherein the gate and the common electrode are overlapped with each other, wherein the source wiring and the first conductive film are overlapped with each other, wherein the first conductive film and the second conductive film are overlapped with each other, wherein the third contact hole does not overlap the common electrode, wherein the pixel electrode has comb-shaped portions, and wherein a space is located between the comb-shaped portions of the pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a first substrate; a first conductive film on and in contact with the first substrate; a first insulating film on and in contact with the first conductive film; a semiconductor film comprising a channel region on and in contact with the first insulating film; a gate insulating film over the semiconductor film; a gate over the gate insulating film; a second insulating film over the gate; a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film; a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film; a third insulating film over the source wiring and the second conductive film; a pixel electrode over the third insulating film and in contact with the second conductive film through a third contact hole in the third insulating film; a common electrode below the pixel electrode with the third insulating film interposed therebetween; an alignment film over the pixel electrode and the common electrode; a liquid crystal over the alignment film; and a second substrate over the liquid crystal, wherein the first conductive film is in a floating state, wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween, wherein the first insulating film is a silicon oxide film, wherein the semiconductor film is a polysilicon film, wherein the gate and the common electrode are overlapped with each other, wherein the source wiring and the first conductive film are overlapped with each other, wherein the first conductive film and the second conductive film are overlapped with each other, wherein the third contact hole does not overlap the common electrode, and wherein the pixel electrode comprises an opening. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A display device comprising:
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a first substrate; a first conductive film over the first substrate; a first insulating film over the first conductive film; a semiconductor film comprising a channel region over the first insulating film; a gate insulating film over the semiconductor film; a gate over the gate insulating film; a second insulating film over the gate; a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film; a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film; a third insulating film over the source wiring and the second conductive film; a pixel electrode over the third insulating film and electrically connected to the second conductive film through a third contact hole in the third insulating film; a common electrode below the pixel electrode with the third insulating film interposed therebetween; an alignment film over the pixel electrode and the common electrode; a liquid crystal over the alignment film; and a second substrate over the liquid crystal, wherein the first conductive film is in a floating state, wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween, wherein the first insulating film is a silicon oxide film, wherein the semiconductor film is a polysilicon film, wherein the gate and the common electrode are overlapped with each other, wherein the source wiring and the first conductive film are overlapped with each other, wherein the first conductive film and the second conductive film are overlapped with each other, wherein the third contact hole does not overlap the common electrode, wherein the first conductive film and the third contact hole do not overlap with each other, wherein the pixel electrode has comb-shaped portions, and wherein a space is located between the comb-shaped portions of the pixel electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A display device comprising:
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a first substrate; a first conductive film over the first substrate; a first insulating film over the first conductive film; a semiconductor film comprising a channel region over the first insulating film; a gate insulating film over the semiconductor film; a gate over the gate insulating film; a second insulating film over the gate; a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film; a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film; a third insulating film over the source wiring and the second conductive film; a pixel electrode over the third insulating film and electrically connected to the second conductive film through a third contact hole in the third insulating film; a common electrode below the pixel electrode with the third insulating film interposed therebetween; an alignment film over the pixel electrode and the common electrode; a liquid crystal over the alignment film; and a second substrate over the liquid crystal, wherein the first conductive film is in a floating state, wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween, wherein the first insulating film is a silicon oxide film, wherein the semiconductor film is a polysilicon film, wherein the gate and the common electrode are overlapped with each other, wherein the source wiring and the first conductive film are overlapped with each other, wherein the first conductive film and the second conductive film are overlapped with each other, wherein the third contact hole does not overlap the common electrode, wherein the first conductive film and the third contact hole do not overlap with each other, and wherein the pixel electrode comprises an opening. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKimura, Hajime
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Primary Examiner(s)Potter, Roy
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Assistant Examiner(s)PATTON, PAUL E
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Application NumberUS14/492,136Publication NumberTime in Patent Office519 DaysField of SearchUS Class Current1/1CPC Class CodesG02F 1/133345 Insulating layers G02F1/133...G02F 1/1337 Surface-induced orientation...G02F 1/133707 Structures for producing di...G02F 1/134309 characterised by their geom...G02F 1/134318 having a patterned common e...G02F 1/134363 for applying an electric fi...G02F 1/134372 for fringe field switching ...G02F 1/13439 characterised by their elec...G02F 1/136 Liquid crystal cells struct...G02F 1/136227 Through-hole connection of ...G02F 1/136277 formed on a semiconductor s...G02F 1/136286 Wiring, e.g. gate line, dra...G02F 1/1368 in which the switching elem...G02F 1/13685 Top gatesG02F 2201/121 common or background
