Selective metal deposition over dielectric layers
First Claim
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1. A method of performing selective electroless plating comprising:
- providing a substrate having a first dielectric layer thereover;
forming an opening extending only partially through the first dielectric layer;
forming a single conductive material directly on and in physical contact with the first dielectric layer, the single conductive material entirely filling the opening;
forming a hydrogen rich target layer over the conductive material, the hydrogen rich target layer comprising a hydrogen rich nitride material containing greater than 3 atomic percent hydrogen;
forming an opening to form a contact on the conductive material; and
performing selective electroless plating of a thin film over the contact.
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Abstract
Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
67 Citations
18 Claims
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1. A method of performing selective electroless plating comprising:
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providing a substrate having a first dielectric layer thereover; forming an opening extending only partially through the first dielectric layer; forming a single conductive material directly on and in physical contact with the first dielectric layer, the single conductive material entirely filling the opening; forming a hydrogen rich target layer over the conductive material, the hydrogen rich target layer comprising a hydrogen rich nitride material containing greater than 3 atomic percent hydrogen; forming an opening to form a contact on the conductive material; and performing selective electroless plating of a thin film over the contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of depositing metal over a dielectric material, comprising:
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forming a dielectric material over a substrate; forming a first opening partially through the dielectric material; depositing a conductive material to entirely fill the opening; forming a hydrogen rich dielectric material containing greater than 3 atomic percent hydrogen and chlorine over and in direct contact with the conductive material; forming a non-hydrogen rich dielectric containing no more than 3 atomic percent hydrogen over the hydrogen rich dielectric material; forming a second opening extending through the non-hydrogen rich dielectric material and the hydrogen rich dielectric material; and depositing a metal material within the second opening and in direct contact with the conductive material. - View Dependent Claims (16, 17, 18)
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Specification