Bonded semiconductor structure with SiGeC/SiGeBC layer as etch stop
First Claim
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1. A method comprising:
- forming a first wafer having a first bonding material;
forming a second wafer having a substrate, a SiGeBC layer, an active layer and a second bonding material, the active layer being between the SiGeBC layer and the second bonding material;
bonding the second wafer to the first wafer at the first and second bonding materials; and
removing the substrate using the SiGeBC layer as an etch stop.
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Abstract
A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC or SiGeBC layer as an etch stop. In some embodiments, the SiGeC or SiGeBC layer is formed by epitaxial growth, ion implantation or a combination of epitaxial growth and ion implantation.
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Citations
20 Claims
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1. A method comprising:
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forming a first wafer having a first bonding material; forming a second wafer having a substrate, a SiGeBC layer, an active layer and a second bonding material, the active layer being between the SiGeBC layer and the second bonding material; bonding the second wafer to the first wafer at the first and second bonding materials; and removing the substrate using the SiGeBC layer as an etch stop. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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forming a first wafer having a first bonding material; forming a second wafer having a substrate, an etch stop layer, an active layer and a second bonding material, the active layer being between the etch stop layer and the second bonding material, the etch stop layer comprising silicon, germanium, and carbon; bonding the second wafer to the first wafer at the first and second bonding materials; and removing the substrate using the etch stop layer. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor structure comprising:
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a first wafer; a first bonding material at a surface of the first wafer; a second wafer bonded to the first wafer; an active layer within the second wafer; and a second bonding material at a surface of the second wafer and being bonded to the first bonding material; wherein a substrate has been removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeBC layer as an etch stop. - View Dependent Claims (18, 19, 20)
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Specification