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Bonded semiconductor structure with SiGeC/SiGeBC layer as etch stop

  • US 9,269,608 B2
  • Filed: 03/30/2015
  • Issued: 02/23/2016
  • Est. Priority Date: 03/24/2014
  • Status: Expired due to Fees
First Claim
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1. A method comprising:

  • forming a first wafer having a first bonding material;

    forming a second wafer having a substrate, a SiGeBC layer, an active layer and a second bonding material, the active layer being between the SiGeBC layer and the second bonding material;

    bonding the second wafer to the first wafer at the first and second bonding materials; and

    removing the substrate using the SiGeBC layer as an etch stop.

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