Semiconductor device
First Claim
1. A semiconductor device comprising:
- a capacitor including a dielectric film between a pair of electrodes;
wherein one of the pair of electrodes comprises the first oxide semiconductor film including hydrogen and oxygen vacancy, andwherein the oxygen vacancy is filled with the hydrogen.
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Accused Products
Abstract
A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor film so as to overlap with the semiconductor film; a pixel which includes a second transistor including a semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes in the pixel; and a capacitor line electrically connected to one of the pair of electrodes. In the semiconductor device, the gate electrode over the semiconductor film of the first transistor is electrically connected to the capacitor line.
120 Citations
15 Claims
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1. A semiconductor device comprising:
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a capacitor including a dielectric film between a pair of electrodes; wherein one of the pair of electrodes comprises the first oxide semiconductor film including hydrogen and oxygen vacancy, and wherein the oxygen vacancy is filled with the hydrogen. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a driver circuit which includes a first transistor including a first oxide semiconductor film and a gate electrode; a pixel which includes a capacitor including a dielectric film between a pair of electrodes; and a capacitor line electrically connected to the gate electrode and one of the pair of electrodes, wherein the one of the pair of electrodes comprises a second oxide semiconductor layer, wherein the second oxide semiconductor film includes hydrogen and oxygen vacancy, and wherein the oxygen vacancy is filled with the hydrogen. - View Dependent Claims (5, 6, 7)
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8. A semiconductor device comprising:
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a driver circuit which includes a first transistor including a first semiconductor film; a pixel which includes a second transistor including a second semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes and a pixel electrode electrically connected to the second transistor, which are in the pixel; and a capacitor line electrically connected to one of the pair of electrodes, wherein the first transistor includes a first gate electrode below the first semiconductor film and a second gate electrode above the first semiconductor film, wherein the second gate electrode is electrically connected to the capacitor line, wherein an insulating film which has a stacked-layer structure of an oxide insulating film and a nitride insulating film is at least over the second semiconductor film, wherein the capacitor comprises a third semiconductor film on the same surface as the second semiconductor film, and the third semiconductor film serves as the one of the pair of electrodes, wherein the pixel electrode serves as the other of the pair of electrodes, wherein the dielectric film is the nitride insulating film, wherein each of the second semiconductor film and the third semiconductor film has a light-transmitting property and includes an oxide semiconductor, wherein the third semiconductor film includes hydrogen and oxygen vacancy, and wherein the oxygen vacancy is filled with the hydrogen. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification